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STPS41L60C Arkusz danych(PDF) 3 Page - STMicroelectronics |
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STPS41L60C Arkusz danych(HTML) 3 Page - STMicroelectronics |
3 / 9 page STPS41L60C Characteristics Doc ID 8616 Rev 6 3/9 Figure 2. Conduction losses versus average current Figure 3. Average forward current versus ambient temperature (δ = 0.5) P (W) F(av) 0 2 4 6 8 10 12 14 16 0 5 10 15 20 25 δ=0.05 δ=0.1 δ=0.2 δ=0.5 δ=1 T δ=tp/T tp I (A) F(av) I (A) F(av) 0 2 4 6 8 10 12 14 16 18 20 22 0 25 50 75 100 125 150 R th(j-a)=Rth(j-c) R th(j-a)=50 °C/W T δ=tp/T tp T (°C) amb Figure 4. Normalized avalanche power derating versus pulse duration Figure 5. Normalized avalanche power derating versus junction temperature 0.001 0.01 0.1 0.01 1 0.1 10 100 1000 1 t (µs) p P(tp) P (1 µs) ARM ARM 0 0.2 0.4 0.6 0.8 1 1.2 25 50 75 100 125 150 T (°C) j P(Tj) P (25 °C) ARM ARM Figure 6. Non repetitive surge peak forward current versus overload duration (maximum values) Figure 7. Relative variation of thermal impedance junction to case versus pulse duration I (A) M 0 25 50 75 100 125 150 175 200 225 250 1.E-03 1.E-02 1.E-01 1.E+00 Tc=25 °C Tc=75 °C Tc=125 °C I M t δ =0.5 t(s) Z/R th(j-c) th(j-c) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.E-03 1.E-02 1.E-01 1.E+00 Single pulse T δ=tp/T tp t (s) p |
Podobny numer części - STPS41L60C_11 |
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Podobny opis - STPS41L60C_11 |
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