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TPS1045B-Y Arkusz danych(PDF) 3 Page - STMicroelectronics |
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TPS1045B-Y Arkusz danych(HTML) 3 Page - STMicroelectronics |
3 / 7 page STPS1045B-Y Characteristics Doc ID 17265 Rev 1 3/7 Figure 1. Average forward power dissipation versus average forward current Figure 2. Average forward current versus ambient temperature ( δ = 0.5) 01234567 89 10 11 12 0 1 2 3 4 5 6 7 8 P(W) F(AV) T δ=tp/T tp I (A) F(AV) δ = 1 δ = 0.05 δ = 0.1 δ = 0.2 δ = 0.5 0 25 50 75 100 125 150 175 0 2 4 6 8 10 12 I (A) F(AV) T (°C) amb R=R th(j-a) th(j-c) R =15°C/W th(j-a) R =70°C/W th(j-a) Figure 3. Normalized avalanche power derating versus pulse duration Figure 4. Normalized avalanche power derating versus junction temperature 0.001 0.01 0.1 0.01 1 0.1 10 100 1000 1 t (µs) p P(t ) P (1µs) ARM p ARM 0 0.2 0.4 0.6 0.8 1 1.2 25 50 75 100 125 150 T (°C) j P(T ) P (25 °C) ARM ARM j Figure 5. Non repetitive surge peak forward current versus overload duration (maximum values) Figure 6. Relative variation of thermal impedance junction to case versus pulse duration 1E-3 1E-2 1E-1 1E+0 0 20 40 60 80 100 120 IM t δ=0.5 I (A) M t(s) T =50°C C T =100°C C T =150°C C 1E-4 1E-3 1E-2 1E-1 1E+0 0.0 0.2 0.4 0.6 0.8 1.0 Z/R th(j-c) th(j-c) T δ=tp/T tp t (s) p δ = 0.5 δ = 0.2 δ = 0.1 Single pulse |
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