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FDD20AN06A0 Arkusz danych(PDF) 8 Page - Fairchild Semiconductor |
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FDD20AN06A0 Arkusz danych(HTML) 8 Page - Fairchild Semiconductor |
8 / 11 page PSPICE Electrical Model .SUBCKT FDD20AN06A0 2 1 3 ; rev April 2003 Ca 12 8 4.4e-10 Cb 15 14 4.4e-10 Cin 6 8 9.2e-10 Dbody 7 5 DbodyMOD Dbreak 5 11 DbreakMOD Dplcap 10 5 DplcapMOD Ebreak 11 7 17 18 67.2 Eds 14 8 5 8 1 Egs 13 8 6 8 1 Esg 6 10 6 8 1 Evthres 6 21 19 8 1 Evtemp 20 6 18 22 1 It 8 17 1 Lgate 1 9 5e-9 Ldrain 2 5 1.0e-9 Lsource 3 7 2e-9 RLgate 1 9 50 RLdrain 2 5 10 RLsource 3 7 20 Mmed 16 6 8 8 MmedMOD Mstro 16 6 8 8 MstroMOD Mweak 16 21 8 8 MweakMOD Rbreak 17 18 RbreakMOD 1 Rdrain 50 16 RdrainMOD 1e-3 Rgate 9 20 4.7 RSLC1 5 51 RSLCMOD 1e-6 RSLC2 5 50 1e3 Rsource 8 7 RsourceMOD 10e-3 Rvthres 22 8 RvthresMOD 1 Rvtemp 18 19 RvtempMOD 1 S1a 6 12 13 8 S1AMOD S1b 13 12 13 8 S1BMOD S2a 6 15 14 13 S2AMOD S2b 13 15 14 13 S2BMOD Vbat 22 19 DC 1 ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*150),2.7))} .MODEL DbodyMOD D (IS=3.8E-12 N=1.06 RS=4e-3 TRS1=2.4e-3 TRS2=1.1e-6 + CJO=6.8e-10 M=0.53 TT=2.3e-8 XTI=3.9) .MODEL DbreakMOD D (RS=1.8 TRS1=1e-3 TRS2=-8.9e-6) .MODEL DplcapMOD D (CJO=2.7e-10 IS=1e-30 N=10 M=0.44) .MODEL MmedMOD NMOS (VTO=3.8 KP=2 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=4.7 T_ABS=25) .MODEL MstroMOD NMOS (VTO=4.34 KP=35 IS=1e-30 N=10 TOX=1 L=1u W=1u T_ABS=25) .MODEL MweakMOD NMOS (VTO=3.27 KP=0.03 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=47 RS=0.1 T_ABS=25) .MODEL RbreakMOD RES (TC1=9e-4 TC2=1e-7) .MODEL RdrainMOD RES (TC1=6e-3 TC2=8e-5) .MODEL RSLCMOD RES (TC1=1e-3 TC2=3.5e-5) .MODEL RsourceMOD RES (TC1=9e-3 TC2=1e-6) .MODEL RvthresMOD RES (TC1=-5.1e-3 TC2=-1.3e-5) .MODEL RvtempMOD RES (TC1=-3e-3 TC2=1e-7) .MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-8 VOFF=-5) .MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-5 VOFF=-8) .MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-2 VOFF=-1.5) .MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-1.5 VOFF=-2) .ENDS Note: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley. 18 22 + - 6 8 + - 5 51 19 8 + - 17 18 6 8 + - 5 8 + - RBREAK RVTEMP VBAT RVTHRES IT 17 18 19 22 12 13 15 S1A S1B S2A S2B CA CB EGS EDS 14 8 13 8 14 13 MWEAK EBREAK DBODY RSOURCE SOURCE 11 7 3 LSOURCE RLSOURCE CIN RDRAIN EVTHRES 16 21 8 MMED MSTRO DRAIN 2 LDRAIN RLDRAIN DBREAK DPLCAP ESLC RSLC1 10 5 51 50 RSLC2 1 GATE RGATE EVTEMP 9 ESG LGATE RLGATE 20 + - + - + - 6 ©2010 Fairchild Semiconductor Corporation FDD20AN06A0_F085 Rev. B1 |
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Podobny opis - FDD20AN06A0_10 |
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