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HUFA76407DK8T Arkusz danych(PDF) 9 Page - Fairchild Semiconductor |
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HUFA76407DK8T Arkusz danych(HTML) 9 Page - Fairchild Semiconductor |
9 / 12 page PSPICE Electrical Model .SUBCKT HUFA76407DK8 2 1 3 ; REV 28 May 1999 CA 12 8 4.55e-10 CB 15 14 5.20e-10 CIN 6 8 3.11e-10 DBODY 7 5 DBODYMOD DBREAK 5 11 DBREAKMOD DPLCAP 10 5 DPLCAPMOD EBREAK 11 7 17 18 67.8 EDS 14 8 5 8 1 EGS 13 8 6 8 1 ESG 6 10 6 8 1 EVTHRES 6 21 19 8 1 EVTEMP 20 6 18 22 1 IT 8 17 1 LDRAIN 2 5 1.0e-9 LGATE 1 9 1.5e-9 LSOURCE 3 7 4.86e-10 MMED 16 6 8 8 MMEDMOD MSTRO 16 6 8 8 MSTROMOD MWEAK 16 21 8 8 MWEAKMOD RBREAK 17 18 RBREAKMOD 1 RDRAIN 50 16 RDRAINMOD 3.00e-2 RGATE 9 20 3.37 RLDRAIN 2 5 10 RLGATE 1 9 15 RLSOURCE 3 7 4.86 RSLC1 5 51 RSLCMOD 1e-6 RSLC2 5 50 1e3 RSOURCE 8 7 RSOURCEMOD 3.80e-2 RVTHRES 22 8 RVTHRESMOD 1 RVTEMP 18 19 RVTEMPMOD 1 S1A 6 12 13 8 S1AMOD S1B 13 12 13 8 S1BMOD S2A 6 15 14 13 S2AMOD S2B 13 15 14 13 S2BMOD VBAT 22 19 DC 1 ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*105),2))} .MODEL DBODYMOD D (IS = 3.17e-13 RS = 2.21e-2 TRS1 = 6.25e-4 TRS2 = -1.11e-6 CJO = 6.82e-10 TT = 7.98e-8 M = 0.65) .MODEL DBREAKMOD D (RS = 3.36e- 1TRS1 = 1.25e- 4TRS2 = 1.34e-6) .MODEL DPLCAPMOD D (CJO = 2.91e-1 0IS = 1e-3 0M = 0.85) .MODEL MMEDMOD NMOS (VTO = 2.00 KP = 1 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 3.37) .MODEL MSTROMOD NMOS (VTO = 2.33 KP = 19 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u) .MODEL MWEAKMOD NMOS (VTO = 1.71 KP = 0.02 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 33.7 RS = 0.1) .MODEL RBREAKMOD RES (TC1 = 1.06e- 3TC2 = 0) .MODEL RDRAINMOD RES (TC1 = 1.23e-2 TC2 = 2.58e-5) .MODEL RSLCMOD RES (TC1 = 1.0e-3 TC2 = 1.0e-6) .MODEL RSOURCEMOD RES (TC1 = 0 TC2 = 0) .MODEL RVTHRESMOD RES (TC1 = -2.19e-3 TC2 = -4.97e-6) .MODEL RVTEMPMOD RES (TC1 = -1.11e- 3TC2 = 0) .MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -7.0 VOFF= -2.5) .MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2.5 VOFF= -7.0) .MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -1.0 VOFF= 0) .MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0 VOFF= -1.0) .ENDS NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature Options ; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley. 18 22 + - 6 8 + - 5 51 19 8 + - 17 18 6 8 + - 5 8 + - RBREAK RVTEMP VBAT RVTHRES IT 17 18 19 22 12 13 15 S1A S1B S2A S2B CA CB EGS EDS 14 8 13 8 14 13 MWEAK EBREAK DBODY RSOURCE SOURCE 11 7 3 LSOURCE RLSOURCE CIN RDRAIN EVTHRES 16 21 8 MMED MSTRO DRAIN 2 LDRAIN RLDRAIN DBREAK DPLCAP ESLC RSLC1 10 5 51 50 RSLC2 1 GATE RGATE EVTEMP 9 ESG LGATE RLGATE 20 + - + - + - 6 HUFA76407DK8T_F085 Rev. C1 www.fairchildsemi.com 9 HUFA76407DK8T_F085 |
Podobny numer części - HUFA76407DK8T_10 |
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Podobny opis - HUFA76407DK8T_10 |
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