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FCD9N60NTM Arkusz danych(PDF) 1 Page - Fairchild Semiconductor |
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1 / 8 page February 2010 ©20010 Fairchild Semiconductor Corporation FCD9N60NTM Rev. A www.fairchildsemi.com 1 Supr eMOSTM FCD9N60NTM N-Channel MOSFET 600V, 9A, 0.385m Ω Features •RDS(on) = 0.330Ω ( Typ.)@ VGS = 10V, ID = 4.5A • Ultra Low Gate Charge (Typ.Qg = 17.8nC) • Low Effective Output Capacitance • 100% Avalanche Tested • RoHS Compliant Description The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based tech- nologies. By utilizing this advance technology and preci se process control, Supr eMOS provide world class Rsp, superior switching performance and ruggedness. This SupreMOS MOSFET fits the industry’s AC-DC SMPS requirements for PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications. D G S G S D D-PAK (TO-252) MOSFET Maximum Ratings T C = 25 oC unless otherwise noted Thermal Characteristics Symbol Parameter FCD9N60N Units VDSS Drain to Source Voltage 600 V VGSS Gate to Source Voltage ±30 V ID Drain Current -Continuous (TC = 25oC) 9.0 A -Continuous (TC = 100oC) 5.7 IDM Drain Current - Pulsed (Note 1) 27 A EAS Single Pulsed Avalanche Energy (Note 2) 135 mJ IAR Avalanche Current 9.0 A EAR Repetitive Avalanche Energy 9.3 mJ dv/dt MOSFET dv/dt Ruggedness 100 V/ns Peak Diode Recovery dv/dt (Note 3) 15 PD Power Dissipation (TC = 25oC) 92.6 W - Derate above 25oC0.74 W/oC TJ, TSTG Operating and Storage Temperature Range -55 to +150 oC TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds 300 oC Symbol Parameter FCD9N60N Units RθJC Thermal Resistance, Junction to Case 1.35 oC/W RθJA Thermal Resistance, Junction to Ambient 62.5 *Drain current limited by maximum junction temperature |
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