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FDD5670 Arkusz danych(PDF) 2 Page - Fairchild Semiconductor |
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FDD5670 Arkusz danych(HTML) 2 Page - Fairchild Semiconductor |
2 / 5 page FDD5670 Rev. B 2 ) ON ( DS D R P Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note 2) WDSS Drain-Source Avalanche Energy Single Pulse, VDD = 20 V, ID = 10A 360 mJ IAR Drain-Source Avalanche Current 10 A Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 μA 60 V ΔBVDSS ===ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, Referenced to 25°C 53 mV/ °C IDSS Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V 1 μA IGSSF Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –20 V, VDS = 0 V –100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 μA 22.5 4 V ΔVGS(th) ===ΔTJ Gate Threshold Voltage Temperature Coefficient ID = 250 μA, Referenced to 25°C –6 mV/ °C RDS(on) Static Drain–Source On–Resistance VGS = 10 V, ID = 10 A VGS = 6 V, ID = 9 A VGS = 10 V, ID = 10 A, TJ = 125 °C 12 14 19 15 18 26 m Ω ID(on) On–State Drain Current VGS = 10 V, VDS = 5 V 60 A gFS Forward Transconductance VDS = 5 V, ID = 10 A 27 S Dynamic Characteristics Ciss Input Capacitance 2739 pF Coss Output Capacitance 441 pF Crss Reverse Transfer Capacitance VDS = 15 V, V GS = 0 V, f = 1.0 MHz 182 pF Switching Characteristics (Note 2) td(on) Turn–On Delay Time 20 32 ns tr Turn–On Rise Time 12 24 ns td(off) Turn–Off Delay Time 60 95 ns tf Turn–Off Fall Time VDD = 30 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω 24 38 ns Qg Total Gate Charge 52 73 nC Qgs Gate–Source Charge 10 nC Qgd Gate–Drain Charge VDS = 15 V, ID = 10 A, VGS = 10 V 13 nC Drain–Source Diode Characteristics and Maximum Ratings VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = 3.5 A (Note 2) 0.74 1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) RθJA = 40°C/W when mounted on a 1in 2 pad of 2 oz copper Scale 1 : 1 on letter size paper b) RθJA = 96°C/W when mounted on a minimum pad. 2. Pulse Test: Pulse Width < 300 μs, Duty Cycle < 2.0% 3. Maximum current is calculated as: where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A |
Podobny numer części - FDD5670_11 |
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Podobny opis - FDD5670_11 |
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