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FDD5670 Arkusz danych(PDF) 2 Page - Fairchild Semiconductor

Numer części FDD5670
Szczegółowy opis  60V N-Channel PowerTrench짰 MOSFET
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Producent  FAIRCHILD [Fairchild Semiconductor]
Strona internetowa  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDD5670 Arkusz danych(HTML) 2 Page - Fairchild Semiconductor

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FDD5670 Rev. B
2
)
ON
(
DS
D
R
P
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Drain-Source Avalanche Ratings (Note 2)
WDSS
Drain-Source Avalanche Energy
Single Pulse, VDD = 20 V, ID = 10A
360
mJ
IAR
Drain-Source Avalanche Current
10
A
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V, ID = 250
μA
60
V
ΔBVDSS
===ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250
μA, Referenced to 25°C
53
mV/
°C
IDSS
Zero Gate Voltage Drain Current
VDS = 48 V,
VGS = 0 V
1
μA
IGSSF
Gate–Body Leakage, Forward
VGS = 20 V,
VDS = 0 V
100
nA
IGSSR
Gate–Body Leakage, Reverse
VGS = –20 V,
VDS = 0 V
–100
nA
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250
μA
22.5
4
V
ΔVGS(th)
===ΔTJ
Gate Threshold Voltage
Temperature Coefficient
ID = 250
μA, Referenced to 25°C
–6
mV/
°C
RDS(on)
Static Drain–Source
On–Resistance
VGS = 10 V, ID = 10 A
VGS = 6 V,
ID = 9 A
VGS = 10 V, ID = 10 A, TJ = 125
°C
12
14
19
15
18
26
m
Ω
ID(on)
On–State Drain Current
VGS = 10 V,
VDS = 5 V
60
A
gFS
Forward Transconductance
VDS = 5 V,
ID = 10 A
27
S
Dynamic Characteristics
Ciss
Input Capacitance
2739
pF
Coss
Output Capacitance
441
pF
Crss
Reverse Transfer Capacitance
VDS = 15 V,
V GS = 0 V,
f = 1.0 MHz
182
pF
Switching Characteristics (Note 2)
td(on)
Turn–On Delay Time
20
32
ns
tr
Turn–On Rise Time
12
24
ns
td(off)
Turn–Off Delay Time
60
95
ns
tf
Turn–Off Fall Time
VDD = 30 V,
ID = 1 A,
VGS = 10 V,
RGEN = 6
Ω
24
38
ns
Qg
Total Gate Charge
52
73
nC
Qgs
Gate–Source Charge
10
nC
Qgd
Gate–Drain Charge
VDS = 15 V,
ID = 10 A,
VGS = 10 V
13
nC
Drain–Source Diode Characteristics and Maximum Ratings
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V,
IS = 3.5 A
(Note 2)
0.74
1.2
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) RθJA = 40°C/W when mounted on a
1in
2 pad of 2 oz copper
Scale 1 : 1 on letter size paper
b) RθJA = 96°C/W when mounted
on a minimum pad.
2. Pulse Test: Pulse Width < 300
μs, Duty Cycle < 2.0%
3. Maximum current is calculated as:
where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A


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