2N2906 datasheet(2/3 Pages) COMSET

Numer części	2N2906

Szczegółowy opis	GENERAL PURPOSE AMPLIFIERS TRANSISTORS

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Producent	COMSET [Comset Semiconductor]

Strona internetowa	http://comset.halfin.com

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2 / 3 page

PNP 2N2906 – 2N2906A

01/10/2012

COMSET SEMICONDUCTORS

2 | 3

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

ICBO

Collector Cutoff

Current

VCB= -50 V

IE= 0

Ta= 25°C

2N2906A

-

-10

nA

2N2906

-

-20

ICBO

Collector Cutoff

Current

Ta= 150°C

2N2906A

-

-10

µA

2N2906

-

-20

IEBO

Emitter Cutoff

Current (*)

VEB= -5 V, IC= 0

2N2906A

-

-50

nA

2N2906

VCEO

Collector Emitter

Breakdown Voltage

IC= -10 mA, IB= 0

2N2906A

-60

-

V

2N2906

-40

-

VCBO

Collector Base

Breakdown Voltage

IC= -10 µA, IE= 0

2N2906A

-60

-

V

2N2906

VEBO

Emitter Base

Breakdown Voltage

IE= -10 µA, IC= 0

2N2906A

-5

-

V

2N2906

hFE

DC Current Gain

IC= -0.1 mA, VCE= -10 V

2N2906A

40

-

2N2906

20

-

IC= -1 mA, VCE= -10 V

2N2906A

40

-

2N2906

25

-

IC= -10 mA, VCE= -10 V

2N2906A

40

-

2N2906

35

-

IC= -150 mA, VCE= -10 V

2N2906A

40

-

120

2N2906

IC= -500 mA, VCE= -10 V

2N2906A

40

-

2N2906

20

-

VCE(SAT)

Collector-Emitter

saturation Voltage

(*)

IC= -150 mA, IB= -15 mA

2N2906A

-

-0.4

V

2N2906

IC= -500 mA, IB= -50 mA

2N2906A

-

-1.6

2N2906

VBE(SAT)

Base-Emitter

saturation Voltage

(*)

IC= -150 mA, IB= -15 mA

2N2906A

-

-1.3

2N2906

IC= -500 mA, IB= -50 mA

2N2906A

-

-2.6

2N2906

fT

Transition

frequency

IC=-50 mA, VCE=-20 V

f= 100MHz (*)

2N2906A

200

-

MHz

2N2906

td

Delay time

IC=-150 mA ,IB =-15 mA

-VCC=-30 V

2N2906A

-

10

ns

tr

Rise time

2N2906

-

40

Cc

Collector

capacitance

IE= Ie = 0 ,VCB= -10 V

f = 1 MHz

2N2906A

-

8

pF

2N2906

Ce

Emitter capacitance

IC= Ic = 0 ,VEB= -2 V

f = 1 MHz

2N2906A

-

30

pF

2N2906

(*) Pulse conditions : tp < 300

µs, δ =2%

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