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BD246B Arkusz danych(PDF) 1 Page - Comset Semiconductor |
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BD246B Arkusz danych(HTML) 1 Page - Comset Semiconductor |
1 / 3 page BD246, A, B, C 25/09/2012 COMSET SEMICONDUCTORS 1/3 P PN NP P S SIIN NG GL LE E--D DIIF FF FU US SE ED D M ME ES SA A S SIIL LIIC CO ON N P PO OW WE ER R T TR RA AN NS SIIS ST TO OR RS S The BD246 series are PNP power transistors in a TO3PN envelope. They are the power transistors for power amplifier and high-speed-switching applications. The complementary is BD245, A, B, C Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VCEO Collector-Emitter Voltage (IC = -30mA) BD246 -45 V BD246A -60 BD246B -80 BD246C -100 VCER Collector-Emitter Voltage (RBE = 100 Ω) BD246 -55 V BD246A -70 BD246B -90 BD246C -115 VEBO Emitter-Base Voltage -5.0 V IC Collector Current IC -10 A ICM -15 IB Base Current -3 A PT Power Dissipation Tmb = 25° C 80 Watts TJ Junction Temperature -65 to +150 °C TS Storage Temperature -65 to +150 THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJC Junction to Case Thermal Resistance 1.56 °C / W RthJA Junction to free air Thermal Resistance 42 °C / W |
Podobny numer części - BD246B |
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Podobny opis - BD246B |
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