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TIP131 Arkusz danych(PDF) 1 Page - Comset Semiconductor |
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TIP131 Arkusz danych(HTML) 1 Page - Comset Semiconductor |
1 / 3 page NPN TIP130 – 131 – 132 30/10/2012 COMSET SEMICONDUCTORS 1/3 09/11/2012 SEMICONDUCTORS SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intented for use in power linear and switching applications. The complementary PNP types are TIP135/136/137 Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VCBO Collector-Base Voltage (IE= 0) TIP130 60 V TIP131 80 TIP132 100 VCEO Collector-Emitter Voltage (IB= 0) TIP130 60 V TIP131 80 TIP132 100 VEBO Emitter-Base Voltage (IC= 0) 5 V IC Collector Current 8 A ICM Collector Peak Current (1) 12 A IB Base Current 0.3 A PT Power Dissipation Tcase @ Tmb < 25° 70 W tamb 2 tJ Junction Temperature 150 °C ts Storage Temperature range -65 to +150 THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJC From Junction to Case Thermal Resistance 1.78 °C/W RthJA From Junction to Free-Air Thermal Resistance 62.5 |
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