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TIP150 Arkusz danych(PDF) 1 Page - Comset Semiconductor |
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TIP150 Arkusz danych(HTML) 1 Page - Comset Semiconductor |
1 / 3 page TIP150 15/10/2012 COMSET SEMICONDUCTORS 1/3 09/11/2012 SEMICONDUCTORS SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. High voltage, high forward and reverse energy designed for industrial and consumer applications. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 8 V IC Collector Current 7 A ICM Collector Peak Current (1) 10 A IB Base Current 1.5 A PT Power Dissipation at Case Temperature (2) @ Tmb < 25° 80 Watts Power Dissipation at free Air Temperature (3) 2 tJ Junction Temperature -65 to +150 °C ts Storage Temperature range -65 to +150 tL Lead Temperature 3.2 mm from case for 10 seconde 260 1. This value applies for tp <5ms, duty cycle <10%. 2. Derate linearly to 150°C case temperature at the rate of 0.64 W/°C. 3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJC From Junction to Case Thermal Resistance 2.5 °C/W RthJA From Junction to Free-Air Thermal Resistance 62.5 |
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