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TIP150 Arkusz danych(PDF) 2 Page - Comset Semiconductor |
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TIP150 Arkusz danych(HTML) 2 Page - Comset Semiconductor |
2 / 3 page TIP150 15/10/2012 COMSET SEMICONDUCTORS 2/3 09/11/2012 SEMICONDUCTORS ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Max Unit VCBO Collector-Base Breakdown Voltage IC= 1 mA, IE= 0 300 - - V VCEO Collector-Emitter Breakdown Voltage (4) IC= 10 mA, IB= 0 300 - - V ICEO Collector-Emitter Cutoff Current IB= 0, VCE = 300 V - - 250 µA ICEOX(sus) Collector-Emitter sustaining Current IE= 0, VCLAMP = VCEO 7 - - A IEBO Emitter Cutoff Current VEB= 8 V, IC= 0 - - 15 mA VCE(SAT) Collector-Emitter saturation Voltage (4-5) IC= 1 A, IB= 10 mA - - 1.5 V IC= 2 A, IB= 100 mA - - 1.5 IC= 5 A, IB= 250 mA - - 2 VBE(SAT) Base-Emitter Saturation Voltage (4-5) IC= 2 A, IB= 100 mA - - 2.2 V IC= 5 A, IB= 250 mA - - 2.3 hFE Forward Current transfer ratio (4-5) VCE= 5.0 V, IC= 2.5 A 150 - - - VCE= 5.0 V, IC= 5 A 50 - - VCE= 5.0 V, IC= 7 A 15 - - hfe Small Signal Forward Current transfer ratio VCE= 5.0 V, IC= 0.5 A f= 1 kHz 200 - - - VF Diode forward Voltage IF= 7 A - - 3.5 V COB Output Capacitance IE= 0 ; VCB= 10 V f= 1 MHz - - 150 pF SWITCHING TIMES. Symbol Ratings Test Condition(s) Min Typ Max Unit td Delay Time VCC= 250 V; IC= 5 A IB1= -IB2= 250 mA tp = 20 µs, duty cycle <2%. - 0.03 - µs tr Rise time - 0.18 - ts Storage Time - 3.5 - tf Fall Time - 1.6 - 4. These parameters must be measured using pulse techniques, tp 300 µs, Duty Cycle ∠ 2.0% 5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. |
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