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TIP3055 Arkusz danych(PDF) 2 Page - Comset Semiconductor

Numer części TIP3055
Szczegółowy opis  SILICON POWER TRANSISTORS
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Producent  COMSET [Comset Semiconductor]
Strona internetowa  http://comset.halfin.com
Logo COMSET - Comset Semiconductor

TIP3055 Arkusz danych(HTML) 2 Page - Comset Semiconductor

  TIP3055 Datasheet HTML 1Page - Comset Semiconductor TIP3055 Datasheet HTML 2Page - Comset Semiconductor TIP3055 Datasheet HTML 3Page - Comset Semiconductor  
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PNP TIP2955
NPN TIP3055
15/10/2012
COMSET SEMICONDUCTORS
2 | 3
SEMICONDUCTORS
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min
Typ
Max
Unit
VCEO (*)
Collector-Emitter Breakdown
Voltage
IC= 30 mA, IB=0
60
-
-
V
ICEO
Collector Cutoff Current
IB =0, VCE = 30 V
-
-
700
µA
ICER
Collector Cutoff Current
VCE= 70 V, RBE= 100 Ω
-
-
1
mA
ICEX
Collector Cutoff Current
VCE= 70 V, VBE= 1.5 V
-
-
5
mA
IEBO
Emitter Cutoff Current
VEB= 7 V, IC=0
-
-
5
mA
VCE(SAT) (*)
Collector-Emitter saturation
Voltage
IC= 4 A, IB= 400 mA
-
-
1.1
V
IC= 10 A, IB= 3.3 A
-
-
3
VBE (*)
Base-Emitter On Voltage
IC= 4 A, VCE = 4 V
-
-
1.8
V
hFE (*)
DC Current Gain
IC= 4 A, VCE = 4 V
20
-
70
-
IC= 10 A, VCE = 4 V
5
-
-
Is/b
Second Breackdown
collector Current.
With base Forward Biased
VCE= 30 V, t= 1.0 s
Non repetitive
3
-
-
A
fT
Transition Frequency
VCE= 10 V, IC= 0.5 A
f= 1 kHz
2.5
-
-
MHz
(*) Pulse Width
≈ 300 µs, Duty Cycle ∠ 1.5%


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