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FM25V02-G Arkusz danych(PDF) 1 Page - Cypress Semiconductor

Numer części FM25V02-G
Szczegółowy opis  256Kb Serial 3V F-RAM Memory
Download  17 Pages
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Producent  CYPRESS [Cypress Semiconductor]
Strona internetowa  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

FM25V02-G Arkusz danych(HTML) 1 Page - Cypress Semiconductor

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This product conforms to specifications per the terms of the Ramtron
Ramtron International Corporation
standard warranty. The product has completed Ramtron’s internal
1850 Ramtron Drive, Colorado Springs, CO 80921
qualification testing and has reached production status.
(800) 545-FRAM, (719) 481-7000
http://www.ramtron.com
Rev. 3.0
Jan. 2012
Page 1 of 17
FM25V02
256Kb Serial 3V F-RAM Memory
Features
256K bit Ferroelectric Nonvolatile RAM
Organized as 32,768 x 8 bits
High Endurance 100 Trillion (10
14) Read/Writes
10 Year Data Retention
NoDelay™ Writes
Advanced High-Reliability Ferroelectric Process
Very Fast Serial Peripheral Interface - SPI
Up to 40 MHz Frequency
Direct Hardware Replacement for Serial Flash
SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)
Write Protection Scheme
Hardware Protection
Software Protection
Device ID and Serial Number
Device ID reads out Manufacturer ID & Part ID
Unique Serial Number (FM25VN02)
Low Voltage, Low Power
Low Voltage Operation 2.0V – 3.6V
90 A Standby Current (typ.)
5 A Sleep Mode Current (typ.)
Industry Standard Configurations
Industrial Temperature -40C to +85C
8-pin “Green”/RoHS SOIC Package
8-pin “Green”/RoHS TDFN Package
Description
The FM25V02 is a 256-kilobit nonvolatile memory
employing an advanced ferroelectric process. A
ferroelectric random access memory or F-RAM is
nonvolatile and performs reads and writes like a
RAM. It provides reliable data retention for 10 years
while eliminating the complexities, overhead, and
system level reliability problems caused by Serial
Flash and other nonvolatile memories.
Unlike Serial Flash, the FM25V02 performs write
operations at bus speed. No write delays are incurred.
Data is written to the memory array immediately
after it has been transferred to the device. The next
bus cycle may commence without the need for data
polling.
The
product
offers
very
high
write
endurance, orders of magnitude more endurance than
Serial Flash. Also, F-RAM exhibits lower power
consumption than Serial Flash.
These capabilities make the FM25V02 ideal for
nonvolatile memory applications requiring frequent
or rapid writes or low power operation. Examples
range from data collection, where the number of
write cycles may be critical, to demanding industrial
controls where the long write time of Serial Flash can
cause data loss.
The FM25V02 provides substantial benefits to users
of Serial Flash as a hardware drop-in replacement.
The devices use the high-speed SPI bus, which
enhances the high-speed write capability of F-RAM
technology. The FM25VN02 is offered with a unique
serial number that is read-only and can be used to
identify a board or system. Both devices incorporate
a read-only Device ID that allows the host to
determine the manufacturer, product density, and
product revision. The devices are guaranteed over an
industrial temperature range of -40°C to +85°C.
Pin Configuration
S
Q
W
VSS
VDD
HOLD
C
D
1
2
3
4
8
7
6
5
Pin Name
Function
/S
Chip Select
/W
Write Protect
/HOLD
Hold
C
Serial Clock
D
Serial Data Input
Q
Serial Data Output
VDD
Supply Voltage
VSS
Ground
/S
Q
/W
VSS
VDD
/HOLD
C
D
8
7
6
5
1
2
3
4
Top View


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