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CSD16407Q5C Arkusz danych(PDF) 1 Page - Texas Instruments |
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CSD16407Q5C Arkusz danych(HTML) 1 Page - Texas Instruments |
1 / 11 page S G S S S D D D D D D D D S G S S Gate Source BottomView Drain TopView VGS − GatetoSourceVoltage − V 0 1 2 3 4 5 6 0 2 4 6 8 10 12 G006 ID =25A TC =125 C °C TC =25 C ° 7 Qg − Gate Charge − nC 0 2 4 6 8 10 12 0 5 10 15 20 25 30 35 G003 ID = 25A VDS = 12.5V CSD16407Q5C www.ti.com SLPS227D – DECEMBER 2009 – REVISED SEPTEMBER 2010 DualCool™ N-Channel NexFET™ Power MOSFET Check for Samples: CSD16407Q5C 1 FEATURES PRODUCT SUMMARY 2 • Ultralow Qg and Qgd VDS Drain to Source Voltage 25 V • DualCool™ Package Qg Gate Charge Total (4.5V) 13.3 nC • Optimized for Two Sided Cooling Qgd Gate Charge Gate to Drain 3.5 nC • Avalanche Rated VGS = 4.5V 2.5 m Ω RDS(on) Drain to Source On Resistance VGS = 10V 1.8 m Ω • Pb Free Terminal Plating V(th) Threshold Voltage 1.6 V • RoHS Compliant • Halogen Free ORDERING INFORMATION • SON 5-mm × 6-mm Plastic Package Device Package Media Qty Ship SON 5-mm × 6-mm 13-Inch Tape and CSD16407Q5C 2500 APPLICATIONS Plastic Package Reel Reel • Point-of-Load Synchronous Buck Converter for Applications in Networking, Telecom and ABSOLUTE MAXIMUM RATINGS Computing Systems TA = 25°C unless otherwise stated VALUE UNIT • Optimized for Synchronous FET Applications VDS Drain to Source Voltage 25 V VGS Gate to Source Voltage +16 / –12 V DESCRIPTION Continuous Drain Current, TC = 25°C 100 A ID Continuous Drain Current(1) 31 A The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications. IDM Pulsed Drain Current, TA = 25°C (2) 200 A PD Power Dissipation(1) 3.1 W TJ, Operating Junction and Storage –55 to 150 °C TSTG Temperature Range Avalanche Energy, single pulse EAS 218 mJ ID = 66A, L = 0.1mH, RG = 25Ω (1) Typical RqJA = 40°C/W on 1-inch 2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu pad on a 0.06-inch (1.52-mm) thick FR4 PCB. (2) Pulse duration ≤300ms, duty cycle ≤2% RDS(on) vs VGS GATE CHARGE 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. 2 DualCool, NexFET are trademarks of Texas Instruments. PRODUCTION DATA information is current as of publication date. Copyright © 2009–2010, Texas Instruments Incorporated Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. |
Podobny numer części - CSD16407Q5C_10 |
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Podobny opis - CSD16407Q5C_10 |
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