CSD16407Q5C_10 datasheet(1/11 Pages) TI1

Numer części	CSD16407Q5C

Szczegółowy opis	ID The NexFET??power MOSFET has been designed to minimize losses in power conversion applications.

Download	11 Pages

Scroll/Zoom	100%

Producent	TI1 [Texas Instruments]

Strona internetowa	http://www.ti.com

Logo

1 / 11 page

S

G

S

D

S

G

S

Gate

Source

BottomView

Drain

TopView

VGS − GatetoSourceVoltage − V

0

1

2

3

4

5

6

0

2

4

6

8

10

12

G006

ID =25A

TC =125 C

°C

TC =25 C

°

7

Qg − Gate Charge − nC

0

2

4

6

8

10

12

0

5

10

15

20

25

30

35

G003

ID = 25A

VDS = 12.5V

CSD16407Q5C

www.ti.com

SLPS227D – DECEMBER 2009 – REVISED SEPTEMBER 2010

DualCool™ N-Channel NexFET™ Power MOSFET

Check for Samples: CSD16407Q5C

1

FEATURES

PRODUCT SUMMARY

2

•

Ultralow Qg and Qgd

VDS

Drain to Source Voltage

25

V

•

DualCool™ Package

Qg

Gate Charge Total (4.5V)

13.3

nC

•

Optimized for Two Sided Cooling

Qgd

Gate Charge Gate to Drain

3.5

nC

•

Avalanche Rated

VGS = 4.5V

2.5

m

Ω

RDS(on)

Drain to Source On Resistance

VGS = 10V

1.8

m

Ω

•

Pb Free Terminal Plating

V(th)

Threshold Voltage

1.6

V

•

RoHS Compliant

•

Halogen Free

ORDERING INFORMATION

•

SON 5-mm × 6-mm Plastic Package

Device

Package

Media

Qty

Ship

SON 5-mm × 6-mm

13-Inch

Tape and

CSD16407Q5C

2500

APPLICATIONS

Plastic Package

Reel

•

Point-of-Load Synchronous Buck Converter

for Applications in Networking, Telecom and

ABSOLUTE MAXIMUM RATINGS

Computing Systems

TA = 25°C unless otherwise stated

VALUE

UNIT

•

Optimized for Synchronous FET Applications

VDS

Drain to Source Voltage

25

V

VGS

Gate to Source Voltage

+16 / –12

V

DESCRIPTION

Continuous Drain Current, TC = 25°C

100

A

ID

Continuous Drain Current(1)

31

A

The NexFET™ power MOSFET has been designed

to minimize losses in power conversion applications.

IDM

Pulsed Drain Current, TA = 25°C

(2)

200

A

PD

Power Dissipation(1)

3.1

W

TJ,

Operating Junction and Storage

–55 to 150

°C

TSTG

Temperature Range

Avalanche Energy, single pulse

EAS

218

mJ

ID = 66A, L = 0.1mH, RG = 25Ω

(1) Typical

RqJA = 40°C/W on 1-inch

2

(6.45-cm2),

2-oz.

(0.071-mm thick) Cu pad on a 0.06-inch (1.52-mm) thick FR4

PCB.

(2) Pulse duration

≤300ms, duty cycle ≤2%

RDS(on) vs VGS

GATE CHARGE

1

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas

Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

2

DualCool, NexFET are trademarks of Texas Instruments.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.

Podobny numer części - CSD16407Q5C_10

Producent	Numer części	Arkusz danych	Szczegółowy opis
Texas Instruments	CSD16407Q5C	191Kb / 10P	[Old version datasheet] DualCool??N-Channel NexFET??Power MOSFET

More results

Podobny opis - CSD16407Q5C_10

Producent	Numer części	Arkusz danych	Szczegółowy opis
Texas Instruments	CSD16408Q5C	340Kb / 11P	[Old version datasheet] The NexFET power MOSFET has been designed to minimize losses in power conversion applications.
	CSD16408Q5	323Kb / 11P	[Old version datasheet] The NexFET power MOSFET has been designed to minimize losses in power conversion applications.
	CSD18504Q5A	745Kb / 12P	[Old version datasheet] The NexFET power MOSFET has been designed to minimize losses in power conversion applications.
	CSD18503Q5A	730Kb / 12P	[Old version datasheet] The NexFET power MOSFET has been designed to minimize losses in power conversion applications.
	CSD18531Q5A	1Mb / 12P	[Old version datasheet] The NexFET power MOSFET has been designed to minimize losses in power conversion applications.
	CSD17302Q5A	521Kb / 11P	[Old version datasheet] The NexFET power MOSFET has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications.
	CSD16340Q3	392Kb / 11P	[Old version datasheet] The NexFET power MOSFET has been designed to minimize losses in power conversion and optimized for 5V gate drive applications.
	CSD17304Q3	532Kb / 11P	[Old version datasheet] The NexFET power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5V gate drive applications.
	CSD17305Q5A	510Kb / 11P	[Old version datasheet] The NexFET power MOSFET has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications.
	CSD17522Q5A	635Kb / 12P	[Old version datasheet] The NexFET power MOSFET has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications.

More results

CSD16407Q5C Arkusz danych(PDF) 1 Page - Texas Instruments

CSD16407Q5C Arkusz danych(HTML) 1 Page - Texas Instruments

Podobny numer części - CSD16407Q5C_10

Podobny opis - CSD16407Q5C_10

Html Pages

1 2 3 4 5 6 7 8 9 10 11

Arkusz danych Pobierz

Link URL