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FST16040 Arkusz danych(PDF) 1 Page - List of Unclassifed Manufacturers |
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FST16040 Arkusz danych(HTML) 1 Page - List of Unclassifed Manufacturers |
1 / 2 page VRRM = 20 V - 100 V IF = 160 A Features • High Surge Capability TO-249AB Package • Types up to 100V VRRM • Isolated to Plate Parameter Symbol FST16020 FST16030 Unit Repetitive peak reverse voltage VRRM 20 30 V Silicon Power Schottky Diode FST16020 thru FST16040 FST16040 35 FST16035 Maximum ratings, at Tj = 25 °C, unless otherwise specified Conditions 40 pp g RMS reverse voltage VRMS 14 21 V DC blocking voltage VDC 20 30 V Continuous forward current IF 160 160 A Operating temperature Tj -40 to 125 -40 to 125 °C Storage temperature Tstg -40 to 175 -40 to 175 °C Parameter Symbol FST16020 FST16030 Unit Diode forward voltage 0.75 0.75 11 10 10 Thermal characteristics Thermal resistance, junction - case RthJC 1.0 1.0 °C/W Electrical characteristics, at Tj = 25 °C, unless otherwise specified Surge non-repetitive forward current, Half Sine Wave IF,SM Reverse current IR VF 10 A 1200 VR = 20 V, Tj = 25 °C IF = 160 A, Tj = 25 °C TC ≤ 100 °C Conditions 25 1200 1200 -40 to 175 160 160 1200 -40 to 175 FST16040 11 FST16035 1.0 VR = 20 V, Tj = 125 °C 1.0 0.75 0.75 10 mA V -40 to 125 -40 to 125 TC = 25 °C, tp = 8.3 ms 28 40 35 www.genesicsemi.com 1 |
Podobny numer części - FST16040 |
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Podobny opis - FST16040 |
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