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FDD8424H_F085A Arkusz danych(PDF) 2 Page - Fairchild Semiconductor |
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FDD8424H_F085A Arkusz danych(HTML) 2 Page - Fairchild Semiconductor |
2 / 11 page 2 Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Type Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V ID = -250µA, VGS = 0V Q1 Q2 40 -40 V ∆ BVDSS ∆ TJ Breakdown Voltage Temperature Coefficient ID = 250µA, referenced to 25°C ID = -250µA, referenced to 25°C Q1 Q2 34 -32 mV/°C IDSS Zero Gate Voltage Drain Current VDS = 32V, VGS = 0V VDS = -32V, VGS = 0V Q1 Q2 1 -1 µ A IGSS Gate to Source Leakage Current VGS = ±20V, VDS = 0V Q1 Q2 ±100 ±100 nA nA On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA VGS = VDS, ID = -250µA Q1 Q2 1 -1 1.7 -1.6 3 -3 V ∆ VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250µA, referenced to 25°C ID = -250µA, referenced to 25°C Q1 Q2 -5.3 4.8 mV/°C rDS(on) Static Drain to Source On Resistance VGS = 10V, ID = 9.0A VGS = 4.5V, ID = 7.0A VGS = 10V, ID = 9.0A, TJ = 125°C Q1 19 23 29 24 30 37 mΩ VGS = -10V, ID = -6.5A VGS = -4.5V, ID = -5.6A VGS = -10V, ID = -6.5A, TJ = 125°C Q2 42 58 62 54 70 80 gFS Forward Transconductance VDS = 5V, ID = 9.0A VDS = -5V, ID = -6.5A Q1 Q2 29 13 S Dynamic Characteristics Ciss Input Capacitance Q1 VDS = 20V, VGS = 0V, f = 1MHZ Q2 VDS = -20V, VGS = 0V, f = 1MHZ Q1 Q2 750 1000 1000 1330 pF Coss Output Capacitance Q1 Q2 115 140 155 185 pF Crss Reverse Transfer Capacitance Q1 Q2 75 75 115 115 pF Rg Gate Resistance f = 1MHz Q1 Q2 1.1 3.3 Ω Switching Characteristics td(on) Turn-On Delay Time Q1 VDD = 20V, ID = 9.0A, VGS = 10V, RGEN = 6Ω Q2 VDD = -20V, ID = -6.5A, VGS = -10V, RGEN = 6Ω Q1 Q2 7 7 14 14 ns tr Rise Time Q1 Q2 13 3 24 10 ns td(off) Turn-Off Delay Time Q1 Q2 17 20 31 36 ns tf Fall Time Q1 Q2 6 3 12 10 ns Qg(TOT) Total Gate Charge Q1 VGS = 10V, VDD = 20V, ID = 9.0A Q2 VGS = -10V, VDD = -20V, ID = -6.5A Q1 Q2 14 17 20 24 nC Qgs Gate to Source Charge Q1 Q2 2.3 3.0 nC Qgd Gate to Drain “Miller” Charge Q1 Q2 3.2 3.6 nC ©2013 Fairchild Semiconductor Corporation FDD8424H_F085A Rev.C1 www.fairchildsemi.com |
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Podobny opis - FDD8424H_F085A_13 |
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