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TPD4S214AYFFR Arkusz danych(PDF) 6 Page - Texas Instruments |
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TPD4S214AYFFR Arkusz danych(HTML) 6 Page - Texas Instruments |
6 / 21 page TPD4S214 SLVSBR1A – JANUARY 2013 – REVISED FEBRUARY 2013 www.ti.com ELECTRICAL CHARACTERISTICS FOR DET CIRCUITS over operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VBUS_VALID– Valid VBUS voltage detect VBUS = 7 V to 0 V 2.7 2.9 3 V VBUS_VALID+ Valid VBUS voltage detect VBUS = 0 V to 7 V 5.3 5.4 5.6 V VBUS detect propagation VBUS 0 V to 4 V, 200 ns ramp; VBUS = VBUS_VALID– MIN to TDET_DELAY– 4.9 µs delay– DET toggles high VBUS detect propagation VBUS 6 V to 4 V, 200 ns ramp; VBUS = VBUS_VALID+ MAX to TDET_DELAY+ 1.8 µs delay+ DET toggles low ELECTRICAL CHARACTERISTICS FOR OTG SWITCH over operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT RDS_ON OTG switch resistance VBUS = 5 V, IOUT = 100 mA, RADJ = 75 kΩ (1) 263 290 m Ω VDROP OTG switch voltage drop VBUS = 5 V, IOUT = 100 mA, RADJ = 75 kΩ 12.6 29 mV VBUS = 30 V, EN = 5 V, VOTG_IN = 5 V 6 µA IOTG_OFF_30V Leakage current at 30V VBUS = 30 V, EN = 5 V, VOTG_IN = 0 V 11 nA IOTG_OFF_2V Leakage current at–2V VBUS = -2 V, EN = 5 V, VOTG_IN = 5 V 30 µA Measured at VBUS = 0 V, EN = 0 V, VOTG_IN = 5 V 32 µA VOTG_IN IOTG_OFF Standby Leakage current VBUS = 5 V, EN = 0 V, VOTG_IN = 0 V 10 nA VBUS = 5 V, EN = 5 V, VOTG_IN = 0V 1 nA IBUS_REV Reverse Leakage current VBUS = 5.5 V, EN = 5 V, VOTG_IN = 5 V 6 µA TON Turn-ON time RL = 100 Ω, CL = 1 uF, RADJ = 75 kΩ 16 ms TOFF_EN Turn-OFF time RL = 100 Ω, CL = 1 uF, RADJ = 75 kΩ, toggle EN 80 µs TOFF_OTG Turn-OFF time RL = 100 Ω, CL = 1 uF, RADJ = 75 kΩ, toggle VOTG_IN 0.5 µs TRISE Output rise time RL = 100 Ω, CL = 1 uF, RADJ = 75 kΩ 137 µs TFALL Output fall time RL = 100 Ω, CL = 1 uF, RADJ = 75 kΩ 1.6 µs (1) RDS_ON is measured at 25°C ELECTRICAL CHARACTERISTICS FOR CURRENT LIMIT and SHORT CIRCUIT PROTECTION over operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT RADJ = 226 kΩ (1) 235 255 281 Current −limit threshold RADJ = 75 kΩ (1) 735 792 830 IOCP (maximum DC output current VOTG_IN = 5 V mA RADJ = 62 kΩ (1) 885 959 1005 IOUT delivered to load) RADJ = 45 kΩ (1) 1128 1200 1363 RL = 1 Ω, CL = 1 uF, TBLANK Blanking time after enable VOTG_IN = 5 V 4 ms RADJ = 75 k Ω TDEGL Deglitch time while enabled 9.4 ms TDET_SC Response time to short circuit 10 µs VOTG_IN = 5 V, RL = 100 Ω, Hiccup pulse width; auto- CL = 1 uF, RADJ = 75 k Ω, TREG Short circuit regulation time 13 ms retry time apply short to ground Short circuit over current TOCP Hiccup pulse period 153 ms protection time VSHORT Short circuit threshold 4 V See Figure 5 under test RL = 100 Ω, CL = 22 µF, IINRUSH Inrush current during a startup 726 mA configuration RADJ = 75 k Ω (1) External resistor tolerance is ±1% 6 Submit Documentation Feedback Copyright © 2013, Texas Instruments Incorporated Product Folder Links: TPD4S214 |
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