SI7655DN datasheet(2/8 Pages) VISHAY

Numer części	SI7655DN

Szczegółowy opis	P-Channel 20 V (D-S) MOSFET

Download	8 Pages

Scroll/Zoom	100%

Producent	VISHAY [Vishay Siliconix]

Strona internetowa	http://www.vishay.com

Logo

2 / 8 page

www.vishay.com

2

Document Number: 63617

S12-2393-Rev. B, 15-Oct-12

Vishay Siliconix

Si7655DN

New Product

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: pmostechsupport@vishay.com

Notes:

a.Surface mounted on 1" x 1" FR4 board.

b.Maximum under steady state conditions is 63 °C/W.

Notes:

a. Pulse test; pulse width

 300 µs, duty cycle  2 %.

b. Guaranteed by design, not subject to production testing.

c. Package limited.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambienta, b

t

10 s

RthJA

21

26

°C/W

Maximum Junction-to-Case (Drain)

Steady State

RthJC

1.7

2.2

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = - 250 µA

- 20

V

VDS Temperature Coefficient

V

DS/TJ

ID = - 250 µA

- 12

mV/

°C

VGS(th) Temperature Coefficient

V

GS(th)/TJ

2.6

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = - 250 µA

- 0.5

- 1.1

V

Gate-Source Leakage

IGSS

VDS = 0 V, VGS = ± 12 V

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = - 20 V, VGS = 0 V

- 1

µA

VDS = - 20 V, VGS = 0 V, TJ = 55 °C

- 10

On-State Drain Currenta

ID(on)

VDS  - 5 V, VGS = - 10 V

- 20

A

Drain-Source On-State Resistancea

RDS(on)

VGS = - 10 V, ID = - 20 A

0.0030

0.0036



VGS = - 4.5 V, ID = - 15 A

0.0039

0.0048

VGS = - 2.5 V, ID = - 10 A

0.0062

0.0085

Forward Transconductancea

gfs

VDS = - 15 V, ID = - 20 A

90

S

Dynamicb

Input Capacitance

Ciss

VDS = - 10 V, VGS = 0 V, f = 1 MHz

6600

pF

Output Capacitance

Coss

890

Reverse Transfer Capacitance

Crss

930

Total Gate Charge

Qg

VDS = - 10 V, VGS = - 10 V, ID = - 20 A

150

225

nC

VDS = - 10 V, VGS = - 4.5 V, ID = - 20 A

72

110

Gate-Source Charge

Qgs

12

Gate-Drain Charge

Qgd

19

Gate Resistance

Rg

f = 1 MHz

0.5

2.6

5.2



Turn-On Delay Time

td(on)

VDD = - 10 V, RL = 1 

ID  - 10 A, VGEN = - 4.5 V, Rg = 1 

45

90

ns

Rise Time

tr

45

90

Turn-Off DelayTime

td(off)

100

200

Fall Time

tf

35

70

Turn-On Delay Time

td(on)

VDD = - 10 V, RL = 1 

ID  - 10 A, VGEN = - 10 V, Rg = 1 

13

25

Rise Time

tr

10

20

Turn-Off DelayTime

td(off)

110

220

Fall Time

tf

25

50

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

IS

TC = 25 °C

- 40c

A

Pulse Diode Forward Currenta

ISM

- 100

Body Diode Voltage

VSD

IF = - 10 A

- 0.75

- 1.2

V

Body Diode Reverse Recovery Time

trr

IF = - 10 A, dI/dt = 100 A/µs, TJ = 25 °C

30

60

ns

Body Diode Reverse Recovery Charge

Qrr

17

26

nC

Reverse Recovery Fall Time

ta

15

ns

Reverse Recovery Rise Time

tb

15

Podobny numer części - SI7655DN

Producent	Numer części	Arkusz danych	Szczegółowy opis
Vishay Siliconix	SI7655DN	218Kb / 9P	P-Channel 20 V (D-S) MOSFET 01-Jan-2022

More results

Podobny opis - SI7655DN

Producent	Numer części	Arkusz danych	Szczegółowy opis
Vishay Siliconix	SI9400DY	58Kb / 4P	P-Channel 20-V (D-S) MOSFET Rev. K, 02-Mar-98
	SI9424BDY	44Kb / 5P	P-Channel 20-V (D-S) MOSFET Rev. A, 07-Oct-02
	SI8407DB	69Kb / 6P	P-Channel 20-V (D-S) MOSFET Rev. B, 17-Jan-05
	SI7401DN	240Kb / 3P	P-Channel 20-V (D-S) MOSFET 31-May-01
	SI7403BDN	106Kb / 8P	P-Channel 20-V (D-S) MOSFET Rev. A, 21-Mar-05
	SIS407DN-T1-GE3	548Kb / 13P	P-Channel 20 V (D-S) MOSFET Rev. B, 06-Sep-10
	SI4477DY-T1-GE3	261Kb / 10P	P-Channel 20-V (D-S) MOSFET Rev. A, 18-May-09
	SIA431DJ	221Kb / 9P	P-Channel 20-V (D-S) MOSFET Rev. B, 21-May-12
	SI1077X	183Kb / 8P	P-Channel 20 V (D-S) MOSFET Rev. A, 24-Dec-12
	SI5457DC	244Kb / 11P	P-Channel 20 V (D-S) MOSFET Rev. A, 06-Sep-10
Analog Power	AM4421P	423Kb / 5P	P-Channel 20-V (D-S) MOSFET

More results

SI7655DN Arkusz danych(PDF) 2 Page - Vishay Siliconix

SI7655DN Arkusz danych(HTML) 2 Page - Vishay Siliconix

Podobny numer części - SI7655DN

Podobny opis - SI7655DN

Html Pages

1 2 3 4 5 6 7 8

Arkusz danych Pobierz

Link URL