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STB120N4LF6 Arkusz danych(PDF) 3 Page - STMicroelectronics |
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STB120N4LF6 Arkusz danych(HTML) 3 Page - STMicroelectronics |
3 / 18 page STB120N4LF6, STD120N4LF6 Electrical ratings Doc ID 16919 Rev 2 3/18 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 40 V VGS Gate-source voltage ± 20 V ID (1) 1. Limited by wire bonding Drain current (continuous) at TC = 25 °C 80 A ID Drain current (continuous) at TC = 100 °C 80 A IDM (2) 2. Pulse width limited by safe operating area Drain current (pulsed) 320 A PTOT Total dissipation at TC = 25 °C 110 W Tstg Storage temperature -55 to 175 °C Tj Operating junction temperature Table 3. Thermal resistance Symbol Parameter Value Unit DPAK D²PAK Rthj-case Thermal resistance junction-case max 1.36 °C/W Rthj-pcb Thermal resistance junction-pcb max (1) 1. When mounted on 1 inch2 2 oz. Cu board. 50 35 °C/W Table 4. Avalanche data Symbol Parameter Value Unit IAV Not-repetitive avalanche current 40 A EAS (1) 1. Starting Tj = 25 °C, ID = 40 A, VDD = 25 V Single pulse avalanche energy 394 mJ |
Podobny numer części - STB120N4LF6 |
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Podobny opis - STB120N4LF6 |
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