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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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2N3703 Arkusz danych(PDF) 2 Page - Fairchild Semiconductor |
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2N3703 Arkusz danych(HTML) 2 Page - Fairchild Semiconductor |
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2 / 2 page  PNP General Purpose Amplifier (continued) Electrical Characteristics TA = 25°C unless otherwise noted OFF CHARACTERISTICS Symbol Parameter Test Conditions Min Max Units V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 10 mA, IB = 0 30 V V(BR)CBO Collector-Base Breakdown Voltage IC = 100 µA, I E = 0 50 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 100 µA, IC = 0 5.0 V ICBO Collector Cutoff Current VCB = 20 V, IE = 0 100 nA IEBO Emitter Cutoff Current VEB = 3.0 V, IC = 0 100 nA ON CHARACTERISTICS* hFE DC Current Gain VCE = 5.0 V, IC = 50 mA 30 150 VCE(sat) Collector-Emitter Saturation Voltage IC = 50 mA, IB = 5.0 mA 0.25 V VBE(on) Base-Emitter On Voltage VCE = 5.0 V, IC = 50 mA 0.6 1.0 V SMALL SIGNAL CHARACTERISTICS Cob Output Capacitance VCB = 10 V, f = 1.0 MHz 12 pF fT Current Gain - Bandwidth Product IC = 50 mA, VCE = 5.0 V, f = 20 MHz 100 MHz *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% |
Podobny numer części - 2N3703 |
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Podobny opis - 2N3703 |
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