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AD5313R Arkusz danych(PDF) 4 Page - Analog Devices

Numer części AD5313R
Szczegółowy opis  Dual, 10-Bit nanoDAC with 2 ppm/C Reference, SPI Interface
Download  28 Pages
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Producent  AD [Analog Devices]
Strona internetowa  http://www.analog.com
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AD5313R Arkusz danych(HTML) 4 Page - Analog Devices

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AD5313R
Data Sheet
Rev. 0 | Page 4 of 28
Parameter
Min
Typ
Max
Unit
Test Conditions/Comments
LOGIC OUTPUTS (SDO)2
Output Low Voltage (VOL)
0.4
V
ISINK = 200 µA
Output High Voltage (VOH)
VLOGIC − 0.4
V
ISOURCE = 200 µA
Floating State Output Capacitance
4
pF
POWER REQUIREMENTS
VLOGIC
1.8
5.5
V
ILOGIC
3
µA
VDD
2.7
5.5
V
Gain = 1
VREF + 1.5
5.5
V
Gain = 2
IDD
VIH = VDD, VIL = GND, VDD = 2.7 V to 5.5 V
Normal Mode9
0.59
0.7
mA
Internal reference off
1.1
1.3
mA
Internal reference on, at full scale
All Power-Down Modes10
1
4
µA
−40°C to +85°C
6
µA
−40°C to +105°C
1
DC specifications tested with the outputs unloaded, unless otherwise noted. Upper dead band = 10 mV; it exists only when VREF = VDD with gain = 1 or when VREF/2 =
VDD with gain = 2. Linearity calculated using a reduced code range of 4 to 1020.
2
Guaranteed by design and characterization; not production tested.
3
Channel A can have an output current of up to 30 mA. Similarly, Channel B can have an output current of up to 30 mA, up to a junction temperature of 110°C.
4
VDD = 5 V. The device includes current limiting that is intended to protect the device during temporary overload conditions. Junction temperature may be exceeded
during current limit, but operation above the specified maximum operation junction temperature can impair device reliability.
5
When drawing a load current at either rail, the output voltage headroom with respect to that rail is limited by the 25
Ω typical channel resistance of the output
devices. For example, when sinking 1 mA, the minimum output voltage = 25 Ω × 1 mA = 25 mV (see Figure 29).
6
Initial accuracy presolder reflow is ±750 µV; output voltage includes the effects of preconditioning drift. See the Internal Reference Setup section.
7
Reference is trimmed and tested at two temperatures and is characterized from −40°C to +105°C.
8
Reference temperature coefficient is calculated as per the box method. See the Terminology section for more information.
9
Interface is inactive, both DACs are active, and DAC outputs are unloaded.
10
Both DACs are powered down.
AC CHARACTERISTICS
VDD = 2.7 V to 5.5 V; RL = 2 kΩ to GND; CL = 200 pF to GND; 1.8 V ≤ VLOGIC ≤ 5.5 V; all specifications TMIN to TMAX, unless otherwise noted.
Temperature range = −40°C to +105°C, typical at 25°C. Guaranteed by design and characterization; not production tested.
Table 3.
Parameter1
Min
Typ
Max
Unit
Test Conditions/Comments
Output Voltage Settling Time
5
7
µs
¼ to ¾ scale settling to ±2 LSB
Slew Rate
0.8
V/µs
Digital-to-Analog Glitch Impulse
0.5
nV-sec
1 LSB change around major carry
Digital Feedthrough
0.13
nV-sec
Digital Crosstalk
0.1
nV-sec
Analog Crosstalk
0.2
nV-sec
DAC-to-DAC Crosstalk
0.3
nV-sec
Total Harmonic Distortion (THD)2
−80
dB
At ambient, BW = 20 kHz, VDD = 5 V, fOUT = 1 kHz
Output Noise Spectral Density (NSD)
300
nV/√Hz
DAC code = midscale, 10 kHz; gain = 2
Output Noise
6
µV p-p
0.1 Hz to 10 Hz
Signal-to-Noise Ratio (SNR)
90
dB
At ambient, BW = 20 kHz, VDD = 5 V, fOUT = 1 kHz
Spurious Free Dynamic Range (SFDR)
83
dB
At ambient, BW = 20 kHz, VDD = 5 V, fOUT = 1 kHz
Signal-to-Noise-and-Distortion Ratio
(SINAD)
80
dB
At ambient, BW = 20 kHz, VDD = 5 V, fOUT = 1 kHz
1
See the Terminology section.
2
Digitally generated sine wave at 1 kHz.


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