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MMSF10N03Z Dane(HTML) 2 Page - Motorola, Inc

Numer części MMSF10N03Z
Szczegółowy opis  SINGLE TMOS POWER MOSFET 10 AMPERES 30 VOLTS
Pobierz  10 Pages
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Producent  MOTOROLA [Motorola, Inc]
Strona internetowa  http://www.freescale.com
Logo MOTOROLA - Motorola, Inc

MMSF10N03Z Datasheet(Arkusz danych) 2 Page - Motorola, Inc

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Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(Cpk
≥ 2.0) (1) (3)
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
30
65
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
1.0
10
µAdc
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
IGSS
3.0
µAdc
ON CHARACTERISTICS(1)
Gate Threshold Voltage
(Cpk
≥ 2.0) (1) (3)
(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
1.0
1.2
3.5
1.7
Vdc
mV/
°C
Static Drain–to–Source On–Resistance
(Cpk
≥ 2.0) (1) (3)
(VGS = 10 Vdc, ID = 10 Adc)
(VGS = 4.5 Vdc, ID = 5.0 Adc)
RDS(on)
10
13
13
18
m
Forward Transconductance (VDS = 15 Vdc, ID = 5.0 Adc) (1)
gFS
7.0
13
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
25 Vdc V
0 Vdc
Ciss
720
1010
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
570
800
Transfer Capacitance
f = 1.0 MHz)
Crss
78
110
SWITCHING CHARACTERISTICS(2)
Turn–On Delay Time
(V
25 Vd
I
1 0 Ad
td(on)
35
70
ns
Rise Time
(VDD = 25 Vdc, ID = 1.0 Adc,
VGS =10Vdc
tr
105
210
Turn–Off Delay Time
VGS = 10 Vdc,
RG = 6.0 Ω) (1)
td(off)
970
1940
Fall Time
G
)
tf
550
1100
Gate Charge
See Figure 8
(V
15 Vd
I
2 0 Ad
QT
46
64
nC
See Figure 8
(VDS = 15 Vdc, ID = 2.0 Adc,
(1)
Q1
3.8
( DS
, D
,
VGS = 10 Vdc) (1)
Q2
11
Q3
8.1
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 10 Adc, VGS = 0 Vdc) (1)
(IS = 10 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
0.80
0.70
1.1
Vdc
Reverse Recovery Time
(I
2 3 Ad
V
0 Vd
trr
460
ns
(IS = 2.3 Adc, VGS = 0 Vdc,
(1)
ta
180
( S
,
GS
,
dIS/dt = 100 A/µs) (1)
tb
280
Reverse Recovery Stored Charge
QRR
4.2
µC
(1) Pulse Test: Pulse Width
≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperatures.
(3) Reflects typical values.
Cpk =
Max limit – Typ
3 x SIGMA


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