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MMSF7P03HD Arkusz danych(PDF) 2 Page - Motorola, Inc |
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MMSF7P03HD Arkusz danych(HTML) 2 Page - Motorola, Inc |
2 / 10 page MMSF7P03HD 2 Motorola TMOS Power MOSFET Transistor Device Data ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (1) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage (VGS = 0 Vdc, ID = 0.25 mAdc) Temperature Coefficient (Positive) V(BR)DSS 30 — — Vdc Zero Gate Voltage Drain Current (VDS = 30 Vdc, VGS = 0 Vdc) (VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS — — — — 1.0 25 µAdc Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) IGSS — — 100 nAdc ON CHARACTERISTICS(2) Gate Threshold Voltage (VDS = VGS, ID = 0.25 mAdc) Threshold Temperature Coefficient (Negative) VGS(th) 1.0 — — Vdc Static Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 5.3 Adc) (VGS = 4.5 Vdc, ID = 2.0 Adc) RDS(on) — — 26 42 35 50 m W Forward Transconductance (VDS = 15 Vdc, ID = 2.5 Adc) gFS — 12 — Mhos DYNAMIC CHARACTERISTICS Input Capacitance (V 24 Vdc V 0 V Ciss — 1200 1680 pF Output Capacitance (VDS = 24 Vdc, VGS = 0 V, f = 1.0 MHz) Coss — 580 810 Transfer Capacitance f = 1.0 MHz) Crss — 160 220 SWITCHING CHARACTERISTICS(3) Turn–On Delay Time (V 15 Vd I 1 0 Ad td(on) — 23.5 47 ns Rise Time (VDD = 15 Vdc, ID = 1.0 Adc, VGS =4 5Vdc tr — 42.7 85.4 Turn–Off Delay Time VGS = 4.5 Vdc, RG = 10 Ω) td(off) — 57.4 114.8 Fall Time G ) tf — 53.6 107.2 Turn–On Delay Time (V 15 Vd I 1 0 Ad td(on) — 16 32 Rise Time (VDD = 15 Vdc, ID = 1.0 Adc, VGS =10Vdc tr — 15.2 30.6 Turn–Off Delay Time VGS = 10 Vdc, RG = 6.0 Ω) td(off) — 99.7 199.4 Fall Time G ) tf — 55.2 110.4 Gate Charge (See Figure 8) (V 10 Vd I 4 9 Ad QT — 37.9 75.8 nC (See Figure 8) (VDS = 10 Vdc, ID = 4.9 Adc, Q1 — 4.2 — ( DS , D , VGS = 6.0 Vdc) Q2 — 11.5 — Q3 — 7.6 — SOURCE–DRAIN DIODE CHARACTERISTICS Forward On–Voltage (IS = 2.3 Adc, VGS = 0 Vdc) (IS = 2.3 Adc, VGS = 0 Vdc, TJ = 125°C) VSD — — 0.76 0.61 1.2 — Vdc Reverse Recovery Time (I 4 9 Ad V 0 Vd trr — 47.9 — ns (IS = 4.9 Adc, VGS = 0 Vdc, ta — 27 — ( S , GS , dIS/dt = 100 A/µs) tb — 21 — Reverse Recovery Stored Charge QRR — 0.052 — µC (1) Negative sign for P–Channel device omitted for clarity. (2) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. (3) Switching characteristics are independent of operating junction temperature. |
Podobny numer części - MMSF7P03HD |
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Podobny opis - MMSF7P03HD |
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