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STF22NM60N Arkusz danych(PDF) 4 Page - STMicroelectronics

Numer części STF22NM60N
Szczegółowy opis  N-channel 600 V, 0.2 廓, 16 A MDmesh??II Power MOSFET
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Producent  STMICROELECTRONICS [STMicroelectronics]
Strona internetowa  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STF22NM60N Arkusz danych(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STB/F/I/P/W22NM60N
4/23
Doc ID 15853 Rev 4
2
Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 5.
On /off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
600
V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = Max rating
VDS = Max rating, TC=125 °C
1
100
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 25 V
100
nA
VGS(th)
Gate threshold voltage VDS = VGS, ID = 250 µA
2
3
4
V
RDS(on)
Static drain-source on
resistance
VGS = 10 V, ID = 8 A
0.2
0.22
Table 6.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 50 V, f = 1 MHz,
VGS = 0
-
1330
84
4.6
-
pF
pF
pF
Coss eq.
(1)
1.
Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDS.
Output equivalent
capacitance
VDS = 0 to 480 V, VGS = 0
-
181
-
pF
Rg
Gate input resistance
f=1 MHz open drain
-
4.7
-
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 480 V, ID = 16 A,
VGS = 10 V
(see Figure 18)
-
44
6
25
-
nC
nC
nC


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