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STP19NM50N Arkusz danych(PDF) 4 Page - STMicroelectronics |
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STP19NM50N Arkusz danych(HTML) 4 Page - STMicroelectronics |
4 / 15 page Electrical characteristics STF19NM50N, STP19NM50N, STW19NM50N 4/15 Doc ID 17079 Rev 1 2 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 5. On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 1 mA, VGS = 0 500 V IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating VDS = Max rating, TC=125 °C 1 10 µA µA IGSS Gate-body leakage current (VDS = 0) VGS = ± 25 V 10 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2 3 4 V RDS(on) Static drain-source on resistance VGS = 10 V, ID = 7 A 0.2 0.25 Ω Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 50 V, f = 1 MHz, VGS = 0 - 1000 72 3 - pF pF pF Co(tr) (1) 1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Equivalent capacitance time related VDS = 0 to 400 V, VGS = 0 -104 - pF Co(er) (2) 2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS Equivalent capacitance energy related -51- pF RG Intrinsic gate resistance f = 1 MHz open drain - 4.4 - Ω Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 400 V, ID = 14 A, VGS = 10 V (see Figure 19) - 34 5 18 - nC nC nC |
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Podobny opis - STP19NM50N |
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