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STP19NM50N Arkusz danych(PDF) 4 Page - STMicroelectronics

Numer części STP19NM50N
Szczegółowy opis  N-channel 500 V, 0.2 ohm, 14 A MDmesh II Power MOSFET in TO-220FP, TO-220 and TO-247
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Producent  STMICROELECTRONICS [STMicroelectronics]
Strona internetowa  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

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Electrical characteristics
STF19NM50N, STP19NM50N, STW19NM50N
4/15
Doc ID 17079 Rev 1
2
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 5.
On /off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
500
V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = Max rating
VDS = Max rating, TC=125 °C
1
10
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 25 V
10
µA
VGS(th)
Gate threshold voltage VDS = VGS, ID = 250 µA
2
3
4
V
RDS(on)
Static drain-source on
resistance
VGS = 10 V, ID = 7 A
0.2
0.25
Table 6.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 50 V, f = 1 MHz,
VGS = 0
-
1000
72
3
-
pF
pF
pF
Co(tr)
(1)
1.
Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when
VDS increases from 0 to 80% VDSS
Equivalent
capacitance time
related
VDS = 0 to 400 V, VGS = 0
-104
-
pF
Co(er)
(2)
2.
Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss
when VDS increases from 0 to 80% VDSS
Equivalent
capacitance energy
related
-51-
pF
RG
Intrinsic gate
resistance
f = 1 MHz open drain
-
4.4
-
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 400 V, ID = 14 A,
VGS = 10 V
(see
Figure 19)
-
34
5
18
-
nC
nC
nC


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