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IRF7416TRPBF Arkusz danych(PDF) 1 Page - International Rectifier |
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IRF7416TRPBF Arkusz danych(HTML) 1 Page - International Rectifier |
1 / 10 page IRF7416PbF HEXFET® Power MOSFET l Generation V Technology l Ultra Low On-Resistance l P-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. 06/29/11 www.irf.com 1 Top View 8 1 2 3 4 5 6 7 D D D G S A D S S VDSS = -30V RDS(on) = 0.02Ω SO-8 Absolute Maximum Ratings Parameter Max. Units ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -10 ID @ TA = 70°C Continuous Drain Current, VGS @ -10V -7.1 IDM Pulsed Drain Current c -45 PD @TA = 25°C Power Dissipation 2.5 Linear Derating Factor 0.02 W/°C VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy d 370 mJ dv/dt Peak Diode Recovery dv/dt e -5.0 V/ns TJ Operating Junction and TSTG Storage Temperature Range Thermal Resistance Parameter Max. Units RθJA Junction-to-Ambient g 50 °C/W W A °C -55 to + 150 PD - 95137A |
Podobny numer części - IRF7416TRPBF |
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