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IRLML2502TR Arkusz danych(PDF) 1 Page - International Rectifier

Numer części IRLML2502TR
Szczegółowy opis  HEXFETPower MOSFET
Download  9 Pages
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Producent  IRF [International Rectifier]
Strona internetowa  http://www.irf.com
Logo IRF - International Rectifier

IRLML2502TR Arkusz danych(HTML) 1 Page - International Rectifier

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Parameter
Typ.
Max.
Units
RθJA
Maximum Junction-to-Ambient
ƒ
75
100
°C/W
IRLML2502
HEXFET® Power MOSFET
These N-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely
low on-resistance per silicon area. This benefit, combined
with the fast switching speed and ruggedized device design
that HEXFETpower MOSFETs are well known for, provides
the designer with an extremely efficient and reliable device
for use in battery and load management.
A thermally enhanced large pad leadframe has been
incorporated into the standard SOT-23 package to produce
a HEXFET Power MOSFET with the industry's smallest
footprint. This package, dubbed the Micro3
, is ideal for
applications where printed circuit board space is at a
premium. The low profile (<1.1mm) of the Micro3 allows it
to fit easily into extremely thin application environments
such as portable electronics and PCMCIA cards. The thermal
resistance and power dissipation are the best available.
Thermal Resistance
VDSS = 20V
RDS(on) = 0.045Ω
l Ultra Low On-Resistance
l N-Channel MOSFET
l SOT-23 Footprint
l Low Profile (<1.1mm)
l Available in Tape and Reel
l Fast Switching
Description
04/30/03
www.irf.com
1
Parameter
Max.
Units
VDS
Drain- Source Voltage
20
V
ID @ TA = 25°C
Continuous Drain Current, VGS @ 4.5V
4.2
ID @ TA= 70°C
Continuous Drain Current, VGS @ 4.5V
3.4
A
IDM
Pulsed Drain Current

33
PD @TA = 25°C
Power Dissipation
1.25
PD @TA = 70°C
Power Dissipation
0.8
Linear Derating Factor
0.01
W/°C
VGS
Gate-to-Source Voltage
± 12
V
TJ, TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
Absolute Maximum Ratings
W
Micro3
D
S
G
3
1
2
PD - 93757C


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