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FDN8601 Arkusz danych(PDF) 1 Page - Fairchild Semiconductor

Numer części FDN8601
Szczegółowy opis  N-Channel PowerTrench짰 MOSFET 100 V, 2.7 A, 109 m
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Producent  FAIRCHILD [Fairchild Semiconductor]
Strona internetowa  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDN8601 Arkusz danych(HTML) 1 Page - Fairchild Semiconductor

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©2010 Fairchild Semiconductor Corporation
FDN8601 Rev. C
www.fairchildsemi.com
1
July 2010
FDN8601
N-Channel PowerTrench® MOSFET
100 V, 2.7 A, 109 m
:
Features
„ Max rDS(on) = 109 m: at VGS = 10 V, ID = 1.5 A
„ Max rDS(on) = 175 m: at VGS = 6 V, ID = 1.2 A
„ High performance trench technology for extremely low rDS(on)
„ High power and current handling capability in a widely used
surface mount package
„ Fast switching speed
„ 100% UIL tested
„ RoHS Compliant
General Description
This
N-Channel
MOSFET
is
produced using Fairchild
Semiconductor‘s advanced Power Trench® process that has
been
optimized
for
rDS(on), switching performance and
ruggedness.
Applications
„ Primary DC-DC Switch
„ Load Switch
MOSFET Maximum Ratings T
A = 25 °C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
Parameter
Ratings
Units
VDS
Drain to Source Voltage
100
V
VGS
Gate to Source Voltage
±20
V
ID
-Continuous
(Note 1a)
2.7
A
-Pulsed
12
EAS
Single Pulse Avalanche Energy
(Note 3)
13
mJ
PD
Power Dissipation
(Note 1a)
1.5
W
Power Dissipation
(Note 1b)
0.6
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
RTJC
Thermal Resistance, Junction to Case
(Note 1)
75
°C/W
RTJA
Thermal Resistance, Junction to Ambient
(Note 1a)
80
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
8601
FDN8601
SSOT-3
7 ’’
8 mm
3000 units


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