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FDN8601 Arkusz danych(PDF) 1 Page - Fairchild Semiconductor |
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FDN8601 Arkusz danych(HTML) 1 Page - Fairchild Semiconductor |
1 / 6 page ©2010 Fairchild Semiconductor Corporation FDN8601 Rev. C www.fairchildsemi.com 1 July 2010 FDN8601 N-Channel PowerTrench® MOSFET 100 V, 2.7 A, 109 m : Features Max rDS(on) = 109 m: at VGS = 10 V, ID = 1.5 A Max rDS(on) = 175 m: at VGS = 6 V, ID = 1.2 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package Fast switching speed 100% UIL tested RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness. Applications Primary DC-DC Switch Load Switch MOSFET Maximum Ratings T A = 25 °C unless otherwise noted Thermal Characteristics Package Marking and Ordering Information Symbol Parameter Ratings Units VDS Drain to Source Voltage 100 V VGS Gate to Source Voltage ±20 V ID -Continuous (Note 1a) 2.7 A -Pulsed 12 EAS Single Pulse Avalanche Energy (Note 3) 13 mJ PD Power Dissipation (Note 1a) 1.5 W Power Dissipation (Note 1b) 0.6 TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C RTJC Thermal Resistance, Junction to Case (Note 1) 75 °C/W RTJA Thermal Resistance, Junction to Ambient (Note 1a) 80 Device Marking Device Package Reel Size Tape Width Quantity 8601 FDN8601 SSOT-3 7 ’’ 8 mm 3000 units |
Podobny numer części - FDN8601 |
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