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BDW23 Arkusz danych(PDF) 2 Page - Fairchild Semiconductor |
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BDW23 Arkusz danych(HTML) 2 Page - Fairchild Semiconductor |
2 / 5 page ©2000 Fairchild Semiconductor International Rev. A, February 2000 Electrical Characteristics T C=25°C unless otherwise noted * Pulse Test: PW =300 µs, duty Cycle =1.5% Pulsed Symbol Parameter Test Condition Min. Typ. Max. Unit s VCEO(sus) Collector-Emitter Sustaining Voltage : BDW23 : BDW23A : BDW23B : BDW23C IC = 100mA, IB = 0 45 60 80 100 V V V V ICBO Collector Cut-off Current : BDW23 : BDW23A : BDW23B : BDW23C VCB = 45V, IE = 0 VCB = 60V, IE = 0 VCB = 80V, IE = 0 VCB = 100V, IE = 0 200 200 200 200 µA µA µA µA ICEO Collector Cut-off Current : BDW23 : BDW23A : BDW23B : BDW23C VCE = 22V, IB = 0 VCE = 30V, IB = 0 VCE = 40V, IB = 0 VCE = 50V, IB = 0 500 500 500 500 µA µA µA µA IEBO Emitter Cut-off Current VEB = 5V, IC = 0 2 mA hFE * DC Current Gain VCE = 3V, IC = 1A VCE = 3V, IC = 2A VCE = 3V, IC = 6A 1000 750 100 20000 VCE(sat) * Collector-Emitter Saturation Voltage IC = 2A, IB = 8mA IC = 6A, IB = 60mA 2 3 V V VBE(sat) * Base-Emitter Saturation Voltage IC = 2A, IB = 8mA 2.5 V VBE(on) * Base-Emitter ON Voltage VCE = 3V, IC = 1A VCE = 3V, IC = 6A 2.5 3 V V VF * Parallel Diode Forward Voltage IF = 2A 1.8 V |
Podobny numer części - BDW23 |
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Podobny opis - BDW23 |
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