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BZX55C6V2 Arkusz danych(PDF) 1 Page - Fairchild Semiconductor |
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BZX55C6V2 Arkusz danych(HTML) 1 Page - Fairchild Semiconductor |
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1 / 1 page Absolute Maximum Ratings* TA = 25°C unless otherwise noted Tolerance: C = 5% Electrical Characteristics TA = 25°C unless otherwise noted @ NOTES: 1) These ratings are based on a maximum junction temperature of 200 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. *These ratings are limiting values above which the serviceability of the diode may be impaired. **Non-recurrent square wave PW= 8.3 ms, TA= 50 degrees C. @ @@ BZX55C 3V3 - 33 Series Half Watt Zeners Parameter Value Units Storage Temperature Range -65 to +200 °C Maximum Junction Operating Temperature + 200 °C Lead Temperature (1/16” from case for 10 seconds) + 230 °C Total Device Dissipation Derate above 25 °C 500 4.0 mW mW/ °C Surge Power** 30 W Device VZ (V) MIN MAX ZZ ( Ω) IZT (mA) ZZK ( Ω) IZT (mA) VR (V) IR ( µA) IR ( µA) TA= 150 °C TC (%/ °C) IZM (mA) BZX55C 3V3 BZX55C 3V6 BZX55C 3V9 BZX55C 4V3 BZX55C 4V7 3.1 3.4 3.7 4.0 4.4 3.5 3.8 4.1 4.6 5.0 85 85 85 75 60 5.0 5.0 5.0 5.0 5.0 600 600 600 600 600 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 2.0 2.0 2.0 1.0 0.5 40 40 40 20 10 - 0.060 - 0.055 - 0.050 - 0.040 - 0.020 115 105 95 90 85 BZX55C 5V1 BZX55C 5V6 BZX55C 6V2 BZX55C 6V8 BZX55C 7V5 4.8 5.2 5.8 6.4 7.0 5.4 6.0 6.6 7.2 7.9 35 25 10 8.0 7.0 5.0 5.0 5.0 5.0 5.0 550 450 200 150 50 1.0 1.0 1.0 1.0 1.0 1.0 1.0 2.0 3.0 5.0 0.1 0.1 0.1 0.1 0.1 2.0 2.0 2.0 2.0 2.0 +0.010 +0.025 +0.032 +0.040 +0.045 80 70 64 58 53 BZX55C 8V2 BZX55C 9V1 BZX55C 10 BZX55C 11 BZX55C 12 7.7 8.5 9.4 10.4 11.4 8.7 9.6 10.6 11.6 12.7 7.0 10 15 20 20 5.0 5.0 5.0 5.0 5.0 50 50 70 70 90 1.0 1.0 1.0 1.0 1.0 6.2 6.8 7.5 8.2 9.1 0.1 0.1 0.1 0.1 0.1 2.0 2.0 2.0 2.0 2.0 +0.048 +0.050 +0.055 +0.060 +0.065 47 43 40 36 32 BZX55C 13 BZX55C 15 BZX55C 16 BZX55C 18 BZX55C 20 12.4 13.8 15.3 16.8 18.8 14.1 15.6 17.1 19.1 21.1 26 30 40 50 55 5.0 5.0 5.0 5.0 5.0 110 110 170 170 220 1.0 1.0 1.0 1.0 1.0 10 11 12 13 15 0.1 0.1 0.1 0.1 0.1 2.0 2.0 2.0 2.0 2.0 0.070 0.070 0.075 0.075 0.080 29 27 24 21 20 BZX55C 22 BZX55C 24 BZX55C 27 BZX55C 30 BZX55C 33 20.8 22.8 25.1 28.0 31.0 23.3 25.6 28.9 32.0 35.0 55 80 80 80 80 5.0 5.0 5.0 5.0 5.0 220 220 220 220 220 1.0 1.0 1.0 1.0 1.0 16 18 20 22 24 0.1 0.1 0.1 0.1 0.1 2.0 2.0 2.0 2.0 2.0 0.080 0.080 0.085 0.085 0.085 18 16 14 13 12 VF Foward Voltage = 1.0 V Maximum @ IF = 100 mA for all BZX 55 series DO-35 Discrete POWER & Signal Technologies ã 1997 Fairchild Semiconductor Corporation |
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