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AD829JNZ Arkusz danych(PDF) 5 Page - Analog Devices |
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AD829JNZ Arkusz danych(HTML) 5 Page - Analog Devices |
5 / 20 page Data Sheet AD829 Rev. I | Page 5 of 20 ABSOLUTE MAXIMUM RATINGS Table 2. Parameter Rating Supply Voltage ±18 V Internal Power Dissipation1 8-Lead PDIP (N) 1.3 W 8-Lead SOIC (R) 0.9 W 8-Lead CERDIP (Q) 1.3 W 20-Terminal LCC (E) 0.8 W Differential Input Voltage2 ±6 V Output Short-Circuit Duration Indefinite Storage Temperature Range 8-Lead CERDIP (Q) and 20-Terminal LCC (E) −65°C to +150°C 8-Lead PDIP (N) and 8-Lead SOIC (R) −65°C to +125°C Operating Temperature Range AD829J 0°C to 70°C AD829A −40°C to +125°C AD829S −55°C to +125°C Lead Temperature (Soldering, 60 sec) 300°C 1 Maximum internal power dissipation is specified so that TJ does not exceed 150°C at an ambient temperature of 25°C. 2 If the differential voltage exceeds 6 V, external series protection resistors should be added to limit the input current. Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. THERMAL CHARACTERISTICS Table 3. Package Type θJA Unit 8-Lead PDIP (N) 100 (derates at 8.7 mW/°C) °C/W 8-Lead CERDIP (Q) 110 (derates at 8.7 mW/°C) °C/W 20-Lead LCC (E) 77 °C/W 8-Lead SOIC (R) 125 (derates at 6 mW/°C) °C/W METALLIZATION PHOTO Figure 3. Metallization Photo; Contact Factory for Latest Dimensions, Dimensions Shown in Inches and (Millimeters) Figure 4. Maximum Power Dissipation vs. Temperature ESD CAUTION –IN 2 OFFSET NULL 1 0.054 (1.37) 0.067 (1.70) SUBSTRATE CONNECTED TO +VS OFFSET NULL 8 +VS 7 –VS 4 CCOMP 5 OUTPUT 6 +IN 3 AMBIENT TEMPERATURE ( °C) –55 –45 –35 –25 –15 –5 5 15 25 35 45 55 65 75 85 95 105 115 0 0.5 1.0 1.5 2.0 2.5 125 CERDIP SOIC PDIP LCC |
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