TC58NVG2S3ETA00 datasheet(3/70 Pages) TOSHIBA

Numer części	TC58NVG2S3ETA00

Szczegółowy opis	4 GBIT (512M x 8 BIT) CMOS NAND E2PROM

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Producent	TOSHIBA [Toshiba Semiconductor]

Strona internetowa	http://www.semicon.toshiba.co.jp/eng

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TC58NVG2S3ETA00

2012-09-01

3

BLOCK DIAGRAM

ABSOLUTE MAXIMUM RATINGS

SYMBOL

RATING

VALUE

UNIT

VCC

Power Supply Voltage

−0.6 to 4.6

V

VIN

Input Voltage

−0.6 to 4.6

V

VI/O

Input /Output Voltage

−0.6 to V

CC + 0.3

(

≤ 4.6 V)

V

PD

Power Dissipation

0.3

W

TSOLDER

Soldering Temperature (10 s)

260

°C

TSTG

Storage Temperature

−55 to 150

°C

TOPR

Operating Temperature

0 to 70

°C

CAPACITANCE *(Ta = 25°C, f = 1 MHz)

SYMB0L

PARAMETER

CONDITION

MIN

MAX

UNIT

CIN

Input

VIN = 0 V

⎯

10

pF

COUT

Output

VOUT = 0 V

⎯

10

pF

*

This parameter is periodically sampled and is not tested for every device.

I/O

Control circuit

Status register

Command register

Column buffer

Column decoder

Data register

Sense amp

Memory cell array

Control circuit

HV generator

Logic control

BY

/

RY

VCC

I/O1

VSS

I/O8

CE

CLE

ALE

WE

RE

BY

/

RY

to

WP

Address register

Podobny numer części - TC58NVG2S3ETA00

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Toshiba Semiconductor	TC58NVG2S3ETA00	67Kb / 3P	NAND Flash Memory(SLC Middle Capacity)

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Podobny opis - TC58NVG2S3ETA00

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