AM4910N datasheet(1/6 Pages) ANALOGPOWER

Numer części	AM4910N

Szczegółowy opis	Dual N-Channel 30-V (D-S) MOSFET

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AM4910N

Analog Power

PRELIMINARY

Publication Order Number:

DS-AM4910_F

These miniature surface mount MOSFETs utilize a

high cell density trench process to provide low

r

DS(on) and to ensure minimal power loss and heat

dissipation. Typical applications are DC-DC

converters and power management in portable and

battery-powered products such as computers,

printers, PCMCIA cards, cellular and cordless

telephones.

VDS (V)

rDS(on) m(Ω)ID (A)

13.5 @ VGS = 10V

10

20 @ VGS = 4.5V

8

PRODUCT SUMMARY

30

Dual N-Channel 30-V (D-S) MOSFET

•Low r

DS(on) provides higher efficiency and

extends battery life

•

Low thermal impedance copper leadframe

SOIC-8 saves board space

•

Fast switching speed

•

High performance trench technology

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

b.

Pulse width limited by maximum junction temperature

1

2

3

4

7

8

5

6

Symbol

Limit

Units

VDS

30

VGS

±20

TA=25

oC10

TA=70

oC8.2

IDM

±50

IS

2.3

A

TA=25

oC2.1

TA=70

oC1.3

TJ, Tstg -55 to 150

oC

Continuous Source Current (Diode Conduction)

a

ABSOLUTE MAXIMUM RATINGS (TA = 25

oC UNLESS OTHERWISE NOTED)

Parameter

Pulsed Drain Current

b

V

Gate-Source Voltage

Drain-Source Voltage

Continuous Drain Current

a

ID

A

Power Dissipation

a

PD

Operating Junction and Storage Temperature Range

W

Symbol

Maximum

Units

Maximum Junction-to-Case

a

t <= 5 sec

RθJC

40

oC/W

Maximum Junction-to-Ambient

a

t <= 5 sec

RθJA

60

oC/W

THERMAL RESISTANCE RATINGS

Parameter

Podobny numer części - AM4910N

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Podobny opis - AM4910N

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