FDC6318 datasheet(3/5 Pages) FAIRCHILD

Numer części	FDC6318

Szczegółowy opis	Dual P-Channel 1.8V PowerTrench Specified MOSFET

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Producent	FAIRCHILD [Fairchild Semiconductor]

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FDC6318P Rev D (W)

Typical Characteristics

0

2

4

6

8

10

01

23

4

-VDS, DRAIN TO SOURCE VOLTAGE (V)

VGS=-4.5V

-3.0V

-1.8V

-1.5V

-2.0V

-2.5V

0.8

1

1.2

1.4

1.6

1.8

2

2.2

024

68

10

-ID, DRAIN CURRENT (A)

VGS = -1.8V

-2.0V

-2.5V

-3.5V

-4.5V

-3.0V

Figure 1. On-Region Characteristics.

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

0.8

0.9

1

1.1

1.2

1.3

-50

-25

0

255075

100

125

150

TJ, JUNCTION TEMPERATURE (

oC)

ID = -2.5A

VGS = -4.5V

0.02

0.08

0.14

0.2

0.26

1234

5

-VGS, GATE TO SOURCE VOLTAGE (V)

ID = -1.5A

TA = 125

oC

TA = 25

oC

Figure 3. On-Resistance Variation with

Temperature.

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

0

2

4

6

8

0.511.522.5

-VGS, GATE TO SOURCE VOLTAGE (V)

TA = -55

oC

25oC

125

oC

VDS = -5V

0.001

0.01

0.1

1

10

0

0.2

0.4

0.6

0.8

1

1.2

-VSD, BODY DIODE FORWARD VOLTAGE (V)

VGS = 0V

TA = 125

oC

25oC

-55oC

Figure 5. Transfer Characteristics.

Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

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