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SI7949DP-T1-E3 Arkusz danych(PDF) 2 Page - Vishay Siliconix |
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SI7949DP-T1-E3 Arkusz danych(HTML) 2 Page - Vishay Siliconix |
2 / 8 page www.vishay.com 2 Document Number: 73130 S09-0223-Rev. B, 09-Feb-09 Vishay Siliconix Si7949DP Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 1 - 3 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 60 V, VGS = 0 V - 1 µA VDS = - 60 V, VGS = 0 V, TJ = 70 °C - 10 On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = - 10 V - 25 A Drain-Source On-State Resistancea RDS(on) VGS = - 10 V, ID = - 5 A 0.051 0.064 Ω VGS = - 4.5 V, ID = - 4.5 A 0.064 0.080 Forward Transconductancea gfs VDS = - 15 V, ID = - 5 A 16 S Diode Forward Voltagea VSD IS = - 2.9 A, VGS = 0 V - 0.8 - 1.2 V Dynamicb Total Gate Charge Qg VDS = - 30 V, VGS = - 10 V, ID = - 5 A 26 40 nC Gate-Source Charge Qgs 4.5 Gate-Drain Charge Qgd 7.0 Gate Resistance Rg 7.0 Ω Turn-On Delay Time td(on) VDD = - 30 V, RL = 30 Ω ID ≅ - 1 A, VGEN = - 10 V, Rg = 6 Ω 815 ns Rise Time tr 915 Turn-Off Delay Time td(off) 65 100 Fall Time tf 30 45 Source-Drain Reverse Recovery Time trr IF = - 5 A, dI/dt = 100 A/µs 41 70 Output Characteristics 0 5 10 15 20 25 30 0 2468 10 VGS = 10 V thru 5 V 3 V DS V - Drain-to-Source Voltage (V) 4 V Transfer Characteristics 0 5 10 15 20 25 30 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 25 °C TC = 125 °C - 55 °C GS V - Gate-to-Source Voltage (V) |
Podobny numer części - SI7949DP-T1-E3 |
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Podobny opis - SI7949DP-T1-E3 |
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