Zakładka z wyszukiwarką danych komponentów |
|
SI8425DB Arkusz danych(PDF) 4 Page - Vishay Siliconix |
|
SI8425DB Arkusz danych(HTML) 4 Page - Vishay Siliconix |
4 / 11 page www.vishay.com 4 Document Number: 63909 S12-2180-Rev. A, 10-Sep-12 Vishay Siliconix Si8425DB This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 For technical questions, contact: pmostechsupport@vishay.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Source-Drain Diode Forward Voltage Threshold Voltage 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 V SD - Source-to-Drain Voltage (V) T J = 150 °C T J = 25 °C 0.2 0.3 0.4 0.5 0.6 0.7 0.8 - 50 - 25 0 25 50 75 100 125 150 T J - Temperature (°C) I D = 250 μA On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.000 0.020 0.040 0.060 0.080 0 1 2 3 4 5 V GS - Gate-to-Source Voltage (V) T J = 125 °C T J = 25 °C I D = 2 A 0.001 0 40 80 60 110 Time (s) 20 0.01 0.1 100 600 Safe Operating Area, Junction-to-Ambient 0.01 0.1 1 10 100 0.1 1 10 100 V DS - Drain-to-Source Voltage (V) * V GS > minimum VGS at which RDS(on) is specified 10 s 100 ms Limited by R DS(on)* 1 ms T A = 25 °C BVDSS Limited 10 ms 1 s DC |
Podobny numer części - SI8425DB |
|
Podobny opis - SI8425DB |
|
|
Link URL |
Polityka prywatności |
ALLDATASHEET.PL |
Czy Alldatasheet okazała się pomocna? [ DONATE ] |
O Alldatasheet | Reklama | Kontakt | Polityka prywatności | Linki | Lista producentów All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |