ADG918BRMZ1 datasheet(5/16 Pages) AD

Numer części	ADG918BRMZ1

Szczegółowy opis	Wideband 4 GHz, 43 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT

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Producent	AD [Analog Devices]

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5 / 16 page

ADG918/ADG919

Rev. C | Page 5 of 16

ABSOLUTE MAXIMUM RATINGS

TA = 25°C, unless otherwise noted.

Table 2.

Parameter

Rating

VDD to GND

–0.5 V to +4 V

Inputs to GND

–0.5 V to VDD + 0.3 V1

Continuous Current

30 mA

Input Power

18 dBm

Operating Temperature Range

Industrial (B Version)

–40°C to +85°C

Storage Temperature Range

–65°C to +150°C

Junction Temperature

150°C

MSOP Package

θJA Thermal Impedance

206°C/W

LFCSP Package

θJA Thermal Impedance (2-layer board)

84°C/W

θJA Thermal Impedance (4-layer board)

48°C/W

Lead Temperature, Soldering (10 sec)

300°C

IR Reflow, Peak Temperature (<20 sec)

235°C

ESD

1 kV

1RF1 and RF2 off port inputs to ground: −0.5 V to VDD – 0.5 V.

Stresses above those listed under Absolute Maximum Ratings

may cause permanent damage to the device. This is a stress

rating only; functional operation of the device at these or any

other conditions above those indicated in the operational

section of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect

device reliability.

ESD CAUTION

Podobny numer części - ADG918BRMZ1

Producent	Numer części	Arkusz danych	Szczegółowy opis
Analog Devices	ADG918BRMZ	652Kb / 16P	Wideband 4 GHz, 43 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT Rev. E
	ADG918BRMZ-500RL7	652Kb / 16P	Wideband 4 GHz, 43 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT Rev. E
	ADG918BRMZ-REEL	652Kb / 16P	Wideband 4 GHz, 43 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT Rev. E
	ADG918BRMZ-REEL7	652Kb / 16P	Wideband 4 GHz, 43 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT Rev. E

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Podobny opis - ADG918BRMZ1

Producent	Numer części	Arkusz danych	Szczegółowy opis
Analog Devices	ADG918	652Kb / 16P	Wideband 4 GHz, 43 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT Rev. E
	ADG904	354Kb / 16P	Wideband, 37 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 4:1 Mux/SP4T REV. 0
	ADG936	395Kb / 16P	Wideband 4 GHz, 36 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, Dual SPDT REV. 0
	ADG901	737Kb / 16P	Wideband, 40 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, SPST Switches REV. B
	ADG901	1Mb / 12P	Wideband, 40 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, SPST Switches REV. A
	ADG904	517Kb / 17P	CMOS 1.65 V to 2.75 V, 4:1 Mux/SP4T REV. C
	ADG904R	517Kb / 17P	CMOS 1.65 V to 2.75 V, 4:1 Mux/SP4T REV. C
	ADG918	120Kb / 4P	Wideband, 43dB Isolation 1GHz, CMOS 1.65 V to 2.75V, 2:1 Mux/SPDT Switches REV. PrC Sept 2002
	ADG904BRUZ	517Kb / 17P	Wideband 2.5 GHz, 37 dB Isolation at 1 GHz, CMOS 1.65V to 2.75V, 4:1 Mux/SP4T REV. C
	ADG836	563Kb / 16P	CMOS 1.65 V TO 3.6 V Dual SPDT/2:1 MUX REV. A

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