NPN General Purpose Amplifier

This device is designed as a general purpose amplifier and switch.

The useful dynamic range extends to 100 mA as a switch and to

100 MHz as an amplifier. Sourced from Process 23.

Absolute Maximum Ratings*

T

A

= 25°C unless otherwise noted

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Symbol

Parameter

Value

Units

Collector-Emitter Voltage

40

V

Collector-Base Voltage

60

V

Emitter-Base Voltage

6.0

V

Collector Current - Continuous

200

mA

Operating and Storage Junction Temperature Range

-55 to +150

°C

Discrete POWER & Signal

Technologies

© 1998 Fairchild Semiconductor Corporation

Thermal Characteristics

T

A

= 25°C unless otherwise noted

Symbol

Characteristic

Max

Units

FFB3904

FMB3904

MMPQ3904

Total Device Dissipation

Derate above 25

°C

300

2.4

700

5.6

1,000

8.0

mW

mW/

°C

Thermal Resistance, Junction to Ambient

Effective 4 Die

Each Die

415

180

125

240

°C/W

°C/W

°C/W

FFB3904

SC70-6

Mark: .1A

C1

B2

E2

E1

B1

C2

pin #1

FMB3904

SuperSOT

Mark: .1A

C1

E1

C2

B1

E2

B2

pin #1

MMPQ3904

SOIC-16

C1

C1

C2

C2

C3

C3

C4

C4

E1

B1

E2

B2

E3

B3

E4

B4