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UC3610DWTRG4 Arkusz danych(PDF) 2 Page - Texas Instruments |
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UC3610DWTRG4 Arkusz danych(HTML) 2 Page - Texas Instruments |
2 / 13 page UC1610 UC3610 SLUS339B − JUNE 1993 − REVISED DECEMBER 2004 2 www.ti.com N OR J PACKAGE TOP VIEW DW PACKAGE TOP VIEW absolute maximum ratings over operating free-air temperature (unless otherwise noted)†} Peak inverse voltage (per diode) 50 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Peak forward current UC1611 1 A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UC2610 1 A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UC3611 3 A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Power dissipation at TA = 70°C 1 W . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Storage temperature range, Tstg −65 °C to 150°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Lead temperature (soldering, 10 seconds) 300 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . † Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. ‡ Consult packaging section of databook for thermal limitations and considerations of package. electrical characteristics, all specifications apply to each individual diode, TJ = 25°C, TA = TJ, (except as noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNITS Forward voltage drop IF = 100 mA 0.35 0.5 0.7 V Forward voltage drop IF = 1 A 0.8 1.0 1.3 V Leakage current VR = 40 V 0.01 0.1 mA Leakage current VR = 40 V, TJ = 100°C 0.1 1.0 mA Reverse recovery 0.5 A forward to 0.5 A reverse 15 ns Forward recovery 1 A forward to 1.1 V recovery 30 ns Junction capacitance VR = 5 V 70 pF NOTE: At forward currents of greater than 1.0 A, a parasitic current of approximately 10 mA may be collected by adjacent diodes. PRODUCT PREVIEW information concerns products in the formative or design phase of development. Characteristic data and other specifications are design goals. Texas Instruments reserves the right to change or discontinue these products without notice. |
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