SI7620DN-T1-GE3 datasheet(3/13 Pages) VISHAY

Numer części	SI7620DN-T1-GE3

Szczegółowy opis	N-Channel 150-V (D-S) MOSFET

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Producent	VISHAY [Vishay Siliconix]

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Document Number: 68702

S-81215-Rev. A, 02-Jun-08

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Vishay Siliconix

Si7620DN

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

0

3

6

9

12

15

0.0

0.5

1.0

1.5

2.0

2.5

3.0

VDS - Drain-to-Source Voltage (V)

VGS =10thru 7 V

VGS =4 V

VGS =5 V

VGS =6 V

0.08

0.09

0.10

0.11

0.12

0.13

0.14

0

3

6

9

12

15

ID - Drain Current (A)

VGS =10 V

0

2

4

6

8

10

0

246

8

10

Qg - Total Gate Charge (nC)

VDS =125 V

VDS =75 V

ID =3.6 A

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

1

2

3

4

5

234

5

6

VGS - Gate-to-Source Voltage (V)

TC = 25 °C

TC = 125 °C

TC =- 55 °C

Crss

0

200

400

600

800

0

10203040

50

Ciss

VDS - Drain-to-Source Voltage (V)

Coss

0.4

0.8

1.2

1.6

2.0

2.4

- 50

- 25

0

25

50

75

100

125

150

TJ -Junction Temperature (°C)

VGS =10 V

ID =3.6 A

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Podobny opis - SI7620DN-T1-GE3

Producent	Numer części	Arkusz danych	Szczegółowy opis
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Vishay Siliconix	SI7846DP-T1-GE3	148Kb / 8P	N-Channel 150-V (D-S) MOSFET Rev. F, 06-Apr-09
	SI7898DP	198Kb / 4P	N-Channel 150-V (D-S) MOSFET Rev. B, 20-Feb-06
	SI4488DY	45Kb / 5P	N-Channel 150-V (D-S) MOSFET Rev. B, 26-May-03
Analog Power	AM70N15-40P	123Kb / 3P	N-Channel 150-V (D-S) MOSFET
VBsemi Electronics Co.,...	VBM1158N	658Kb / 8P	N-Channel 150 V (D-S) MOSFET
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SI7620DN-T1-GE3 Arkusz danych(PDF) 3 Page - Vishay Siliconix

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