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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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ADS1248 Arkusz danych(PDF) 2 Page - Texas Instruments |
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ADS1248 Arkusz danych(HTML) 2 Page - Texas Instruments |
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2 / 70 page  ADS1246 ADS1247 ADS1248 SBAS426G – AUGUST 2008 – REVISED OCTOBER 2011 www.ti.com This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. PACKAGE/ORDERING INFORMATION(1) DUAL SENSOR EXCITATION CURRENT PACKAGE- PRODUCT NUMBER OF INPUTS VOLTAGE REFERENCE SOURCES LEAD 1 Differential ADS1246 or External NO TSSOP-16 1 Single-Ended 2 Differential ADS1247 or Internal or External YES TSSOP-20 3 Single-Ended 4 Differential ADS1248 or Internal or External YES TSSOP-28 7 Single-Ended (1) For the most current package and ordering information, see the Package Option Addendum at the end of this data sheet, or see the TI website at www.ti.com ABSOLUTE MAXIMUM RATINGS (1) Over operating free-air temperature range (unless otherwise noted). ADS1246, ADS1247, ADS1248 PARAMETER MIN MAX UNIT AVDD to AVSS –0.3 +5.5 V AVSS to DGND –2.8 +0.3 V DVDD to DGND –0.3 +5.5 V 100, momentary mA Input current 10, continuous mA Analog input voltage to AVSS AVSS – 0.3 AVDD + 0.3 V Digital input voltage to DGND –0.3 DVDD + 0.3 V Maximum junction temperature +150 °C Operating temperature range –40 +125 °C Storage temperature range –60 +150 °C (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 2 Copyright © 2008–2011, Texas Instruments Incorporated |
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