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TS3USB30EDGSR Arkusz danych(PDF) 4 Page - Texas Instruments

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Numer części TS3USB30EDGSR
Szczegółowy opis  ESD PROTECTED, HIGH-SPEED USB 2.0 (480-Mbps) 1:2 MULTIPLEXER/DEMULTIPLEXER SWITCH WITH SINGLE ENABLE
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Strona internetowa  http://www.ti.com
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TS3USB30EDGSR Arkusz danych(HTML) 4 Page - Texas Instruments

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TS3USB30E
SCDS255E – DECEMBER 2008 – REVISED AUGUST 2012
www.ti.com
ELECTRICAL CHARACTERISTICS
(1)
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP(2)
MAX
UNIT
VIK
VCC = 3 V,
II = –18 mA
–1.2
V
IIN
Control inputs
VCC = 4.3 V, 0 V,
VIN = 0 to 4.3 V
±1
μA
VCC = 4.3 V,
VO = 0 to 3.6 V,
IOZ
(3)
±1
μA
VI = 0,
Switch OFF
VCC = 0 V,
VO = 0 to 4.3 V,
IOFF
D+ and D–
±2
μA
VI = 0,
VIN = VCC or GND
ICC
VCC = 4.3 V,
II/O = 0,
Switch ON or OFF
1
μA
ΔICC
(4)
Control inputs
VCC = 4.3 V,
VIN = 2.6 V
10
μA
Cin
Control inputs
VCC = 0 V,
VIN = VCC or GND
1
pF
Cio(OFF)
VCC = 3.3 V,
VI/O = 3.3 V or 0,
Switch OFF
2
pF
Cio(ON)
VCC = 3.3 V,
VI/O = 3.3 V or 0,
Switch ON
7.5
pF
ron
(5)
VCC = 3 V,
VI = 0.4,
IO = –8 mA
6
10
Ω
Δron
VCC = 3 V,
VI = 0.4,
IO = –8 mA
0.35
Ω
ron(flat)
VCC = 3 V,
VI = 0 V or 1 V,
IO = –8 mA
2
Ω
(1)
VIN and IIN refer to control inputs. VI, VO, II, and IO refer to data pins.
(2)
All typical values are at VCC = 3.3 V (unless otherwise noted), TA = 25°C.
(3)
For I/O ports, the parameter IOZ includes the input leakage current.
(4)
This is the increase in supply current for each input that is at the specified TTL voltage level, rather than VCC or GND.
(5)
Measured by the voltage drop between the A and B terminals at the indicated current through the switch. ON-state resistance is
determined by the lower of the voltages of the two (A or B) terminals.
4
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