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ADG711BR-REEL Arkusz danych(PDF) 4 Page - Analog Devices |
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ADG711BR-REEL Arkusz danych(HTML) 4 Page - Analog Devices |
4 / 16 page ADG711/ADG712/ADG713 Rev. B | Page 4 of 16 VDD = +3 V ± 10%, GND = 0 V. All specifications −40°C to +85°C, unless otherwise noted. Table 2. Parameter +25°C −40°C to +85°C Unit Test Conditions/Comments ANALOG SWITCH Analog Signal Range 0 V to VDD V On Resistance (RON) 5 5.5 Ω typ VS = 0 V to VDD, IS = −10 mA; 8 Ω max See Figure 11 On Resistance Match Between 0.1 Ω typ VS = 0 V to VDD, IS = −10 mA Channels (ΔRON) 0.3 Ω max On Resistance Flatness (RFLAT(ON)) 2.5 Ω typ VS = 0 V to VDD, IS = −10 mA LEAKAGE CURRENTS VDD = +3.3 V Source Off Leakage IS (Off ) ±0.01 nA typ VS = 3 V/1 V, VD = 1 V/3 V ±0.1 ±0.2 nA max See Figure 12 Drain Off Leakage ID (Off ) ±0.01 nA typ VS = 3 V/1 V, VD = 1 V/ 3 V ±0.1 ±0.2 nA max See Figure 12 Channel On Leakage ID, IS (On) ±0.01 nA typ VS = VD = 1 V, or 3 V ±0.1 ±0.2 nA max See Figure 13 DIGITAL INPUTS Input High Voltage, VINH 2.0 V min Input Low Voltage, VINL 0.4 V max Input Current IINL or IINH 0.005 μA typ VIN = VINL or VINH ±0.1 μA max DYNAMIC CHARACTERISTICS1 tON 13 ns typ RL = 300 Ω, CL = 35 pF 20 ns max VS = 2 V; see Figure 14 tOFF 7 ns typ RL = 300 Ω, CL = 35 pF 12 ns max VS = 2 V; see Figure 14 Break-Before-Make Time Delay, tD 7 ns typ RL = 300 Ω, CL = 35 pF (ADG713 Only) 1 ns min VS1 = VS2 = 2 V; see Figure 15 Charge Injection 3 pC typ VS = 1.5 V; RS = 0 Ω, CL = 1 nF; see Figure 16 Off Isolation −58 dB typ RL = 50 Ω, CL = 5 pF, f = 10 MHz −78 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 17 Channel-to-Channel Crosstalk −90 dB typ RL = 50 Ω, CL = 5 pF, f = 10 MHz; see Figure 18 Bandwidth −3 dB 200 MHz typ RL = 50 Ω, CL = 5 pF; see Figure 19 CS 10 pF typ CD 10 pF typ CD, CS (On) 22 pF typ POWER REQUIREMENTS VDD = +3.3 V IDD 0.001 μA typ Digital inputs = 0 V or 3 V 1.0 μ max 1 Guaranteed by design, not subject to production test. |
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