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TIP29C Arkusz danych(PDF) 1 Page - List of Unclassifed Manufacturers

Numer części TIP29C
Szczegółowy opis  High Power Bipolar Transistors
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TIP29C Arkusz danych(HTML) 1 Page - List of Unclassifed Manufacturers

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High Power Bipolar Transistors
Tip Series
Page <1>
16/06/12 V1.1
www.element14.com
www.farnell.com
www.newark.com
Dimensions : Millimetres
Features:
• Collector-Emitter sustaining voltage-
VCEO (sus)
= 60 V (Minimum) - TIP29A, TIP30A
= 100 V (Minimum) - TIP29C, TIP30C
• Collector-Emitter saturation voltage-
VCE (sat)
= 0.7 V (Maximum) at IC = 1 A
• Current gain-bandwidth product fT = 3 MHz (Minimum) at IC = 200 mA
1 A
Complementary Silicon
Power Transistors
40 - 100 V
30 W
TO-220
Pin 1. Base
2. Collector
3. Emitter
4. Collector (Case)
Dimensions
Minimum
Maximum
A
14.68
15.31
B
9.78
10.42
C
5.01
6.52
D
13.06
14.62
E
3.57
4.07
F
2.42
3.66
G
1.12
1.36
H
0.72
0.96
I
4.22
4.98
J
1.14
1.38
K
2.2
2.97
L
0.33
0.55
M
2.48
2.98
O
3.7
3.9
Maximum Ratings
Characteristic
Symbol
TIP29A
TIP30A
TIP29C
TIP30C
Unit
Collector-Emitter Voltage
VCEO
60
100
V
Collector-Base Voltage
VCBO
Emitter-Base Voltage
VEBO
5
Collector Current-Continuous
- Peak
IC
1
3
A
Base Current
IB
0.4
Total Power Dissipation at TC = 25°C
Derate above 25°C
PD
30
0.24
W
W / °C
Operating and Storage Junction Temperature Range
TJ, TSTG
-65 to +150
°C
NPN
PNP
TIP29A TIP30A
TIP29C TIP30C


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