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FQP50N06L Arkusz danych(PDF) 2 Page - Fairchild Semiconductor |
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FQP50N06L Arkusz danych(HTML) 2 Page - Fairchild Semiconductor |
2 / 8 page Rev. A1. May 2001 ©2001 Fairchild Semiconductor Corporation Electrical Characteristics TC = 25°C unless otherwise noted Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 300 µH, I AS = 52.4A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 52.4A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300 µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 60 -- -- V ∆BV DSS / ∆T J Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.06 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 60 V, VGS = 0 V -- -- 1 µA VDS = 48 V, TC = 150°C -- -- 10 µA IGSSF Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 1.0 -- 2.5 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 26.2 A VGS = 5 V, ID =26.2 A -- -- 0.017 0.020 0.021 0.025 Ω gFS Forward Transconductance VDS = 25 V, ID = 26.2 A -- 40 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 1250 1630 pF Coss Output Capacitance -- 445 580 pF Crss Reverse Transfer Capacitance -- 90 120 pF Switching Characteristics td(on) Turn-On Delay Time VDD = 30 V, ID = 26.2 A, RG = 25 Ω -- 20 50 ns tr Turn-On Rise Time -- 380 770 ns td(off) Turn-Off Delay Time -- 80 170 ns tf Turn-Off Fall Time -- 145 300 ns Qg Total Gate Charge VDS = 48 V, ID = 52.4 A, VGS = 5 V -- 24.5 32 nC Qgs Gate-Source Charge -- 6 -- nC Qgd Gate-Drain Charge -- 14.5 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 52.4 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 210 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 52.4 A -- -- 1.5 V trr Reverse Recovery Time VGS = 0 V, IS = 52.4 A, dIF / dt = 100 A/µs -- 65 -- ns Qrr Reverse Recovery Charge -- 125 -- nC (Note 4) (Note 4, 5) (Note 4, 5) (Note 4) |
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