Zakładka z wyszukiwarką danych komponentów
  Polish  ▼
ALLDATASHEET.PL

X  

FQPF11P06 Arkusz danych(PDF) 2 Page - Fairchild Semiconductor

Numer części FQPF11P06
Szczegółowy opis  60V P-Channel MOSFET
Download  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Producent  FAIRCHILD [Fairchild Semiconductor]
Strona internetowa  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FQPF11P06 Arkusz danych(HTML) 2 Page - Fairchild Semiconductor

  FQPF11P06 Datasheet HTML 1Page - Fairchild Semiconductor FQPF11P06 Datasheet HTML 2Page - Fairchild Semiconductor FQPF11P06 Datasheet HTML 3Page - Fairchild Semiconductor FQPF11P06 Datasheet HTML 4Page - Fairchild Semiconductor FQPF11P06 Datasheet HTML 5Page - Fairchild Semiconductor FQPF11P06 Datasheet HTML 6Page - Fairchild Semiconductor FQPF11P06 Datasheet HTML 7Page - Fairchild Semiconductor FQPF11P06 Datasheet HTML 8Page - Fairchild Semiconductor  
Zoom Inzoom in Zoom Outzoom out
 2 / 8 page
background image
Rev. A4. May 2001
©2001 Fairchild Semiconductor Corporation
Elerical Characteristics
TC = 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 2.5mH, IAS = -8.6A, VDD = -25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ -11.4A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300
µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = -250 µA
-60
--
--
V
∆BV
DSS
/
∆T
J
Breakdown Voltage Temperature
Coefficient
ID = -250 µA, Referenced to 25°C
--
-0.07
--
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = -60 V, VGS = 0 V
--
--
-1
µA
VDS = -48 V, TC = 150°C
--
--
-10
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS = -25 V, VDS = 0 V
--
--
-100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = 25 V, VDS = 0 V
--
--
100
nA
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = -250 µA
-3.0
--
-5.0
V
RDS(on)
Static Drain-Source
On-Resistance
VGS = -10 V, ID = -4.3 A
--
0.14
0.175
gFS
Forward Transconductance
VDS = -30 V, ID = -4.3 A
--
4.75
--
S
Dynamic Characteristics
Ciss
Input Capacitance
VDS = -25 V, VGS = 0 V,
f = 1.0 MHz
--
420
550
pF
Coss
Output Capacitance
--
195
250
pF
Crss
Reverse Transfer Capacitance
--
45
60
pF
Switching Characteristics
td(on)
Turn-On Delay Time
VDD = -30 V, ID = -5.7 A,
RG = 25 Ω
--
6.5
25
ns
tr
Turn-On Rise Time
--
40
90
ns
td(off)
Turn-Off Delay Time
--
15
40
ns
tf
Turn-Off Fall Time
--
45
100
ns
Qg
Total Gate Charge
VDS = -48 V, ID = -11.4 A,
VGS = -10 V
--
13
17
nC
Qgs
Gate-Source Charge
--
2.0
--
nC
Qgd
Gate-Drain Charge
--
6.3
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
-8.6
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
-34.4
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = -8.6 A
--
--
-4.0
V
trr
Reverse Recovery Time
VGS = 0 V, IS = -11.4 A,
dIF / dt = 100 A/µs
--
83
--
ns
Qrr
Reverse Recovery Charge
--
0.26
--
µC
(Note 4)
(Note 4, 5)
(Note 4, 5)
(Note 4)


Podobny numer części - FQPF11P06

ProducentNumer częściArkusz danychSzczegółowy opis
logo
Fairchild Semiconductor
FQPF11N40 FAIRCHILD-FQPF11N40 Datasheet
718Kb / 8P
   400V N-Channel MOSFET
logo
Inchange Semiconductor ...
FQPF11N40 ISC-FQPF11N40 Datasheet
278Kb / 2P
   isc N-Channel MOSFET Transistor
2023-10-11
logo
Fairchild Semiconductor
FQPF11N40C FAIRCHILD-FQPF11N40C Datasheet
709Kb / 10P
   FQP11N40C / FQPF11N40C N-Channel QFET짰 MOSFET 400 V, 10.5 A, 530 m廓
FQPF11N40C FAIRCHILD-FQPF11N40C Datasheet
709Kb / 10P
   N-Channel QFET짰 MOSFET 400 V, 10.5 A, 530 m廓
logo
Inchange Semiconductor ...
FQPF11N40C ISC-FQPF11N40C Datasheet
278Kb / 2P
   isc N-Channel MOSFET Transistor
2023-10-11
More results

Podobny opis - FQPF11P06

ProducentNumer częściArkusz danychSzczegółowy opis
logo
Kersemi Electronic Co.,...
KSM17P06 KERSEMI-KSM17P06 Datasheet
1Mb / 6P
   60V P-Channel MOSFET
logo
Fairchild Semiconductor
FQPF7P06 FAIRCHILD-FQPF7P06 Datasheet
665Kb / 8P
   60V P-Channel MOSFET
FQP47P06 FAIRCHILD-FQP47P06 Datasheet
714Kb / 8P
   60V P-Channel MOSFET
FQD7P06 FAIRCHILD-FQD7P06 Datasheet
665Kb / 9P
   60V P-Channel MOSFET
FQP11P06 FAIRCHILD-FQP11P06 Datasheet
646Kb / 8P
   60V P-Channel MOSFET
logo
shenzhen wanhexing Elec...
AO4441 WHXPCB-AO4441 Datasheet
2Mb / 5P
   60V P-Channel MOSFET
logo
Fairchild Semiconductor
FQB27P06 FAIRCHILD-FQB27P06 Datasheet
700Kb / 9P
   60V P-Channel MOSFET
logo
Guangdong Youtai Semico...
AO4421 UMW-AO4421 Datasheet
376Kb / 6P
   -60V P-Channel MOSFET
AO4441 UMW-AO4441 Datasheet
460Kb / 7P
   -60V P-Channel MOSFET
More results


Html Pages

1 2 3 4 5 6 7 8


Arkusz danych Pobierz

Go To PDF Page


Link URL




Polityka prywatności
ALLDATASHEET.PL
Czy Alldatasheet okazała się pomocna?  [ DONATE ] 

O Alldatasheet   |   Reklama   |   Kontakt   |   Polityka prywatności   |   Linki   |   Lista producentów
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com