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IRF7503TR Arkusz danych(PDF) 1 Page - International Rectifier |
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IRF7503TR Arkusz danych(HTML) 1 Page - International Rectifier |
1 / 8 page IRF7503 PD - 9.1266G Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The new Micro8 package, with half the footprint area of the standard SO-8, provides the smallest footprint available in an SOIC outline. This makes the Micro8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. l Generation V Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Very Small SOIC Package l Low Profile (<1.1mm) l Available in Tape & Reel l Fast Switching VDSS = 30V RDS(on) = 0.135Ω HEXFET® Power MOSFET Description Micro8 D1 D1 D2 D2 G1 S2 G2 S1 T o p V iew 8 1 2 3 4 5 6 7 8/25/97 Thermal Resistance Parameter Max. Units ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 2.4 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 1.9 A IDM Pulsed Drain Current 14 PD @TA = 25°C Power Dissipation 1.25 W Linear Derating Factor 10 mW/°C VGS Gate-to-Source Voltage ± 20 V dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ,TSTG Junction and Storage Temperature Range -55 to + 150 °C Absolute Maximum Ratings All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective only for product marked with Date Code 505 or later . Parameter Typ. Max. Units RθJA Maximum Junction-to-Ambient ––– 100 °C/W |
Podobny numer części - IRF7503TR |
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Podobny opis - IRF7503TR |
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