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FQA13N80-F109 Arkusz danych(PDF) 1 Page - Fairchild Semiconductor |
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FQA13N80-F109 Arkusz danych(HTML) 1 Page - Fairchild Semiconductor |
1 / 8 page 1 www.fairchildsemi.com ©2007 Fairchild Semiconductor Corporation FQA13N80_F109 Rev. C0 FQA13N80_F109 N-Channel QFET® MOSFET 800 V, 12.6 A, 750 mΩ • 12.6 A, 800 V, RDS(on) = 750 mΩ (Max.) @ VGS = 10 V ID = 6.8 A • Low Gate Charge (Typ. 68 nC) • Low Crss ( Typ. 30 pF) • 100% Avalanche Tested Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Absolute Maximum Ratings Thermal Characteristics D G S TO-3PN Symbol Parameter FQA13N80_F109 Unit VDSS Drain-Source Voltage 800 V ID Drain Current - Continuous (TC = 25°C) 12.6 A - Continuous (TC = 100°C) 8.0 A IDM Drain Current - Pulsed (Note 1) 50.4 A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 1100 mJ IAR Avalanche Current (Note 1) 12.6 A EAR Repetitive Avalanche Energy (Note 1) 30 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.0 V/ns PD Power Dissipation (TC = 25°C) 300 W - Derate above 25°C 2.38 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C Symbol Parameter FQA13N80_F109 Unit RθJC Thermal Resistance, Junction-to-Case , Max. 0.42 °C/W RθCS Thermal Resistance, Case-to-Sink , Typ. 0.24 °C/W RθJA Thermal Resistance, Junction-to-Ambient , Max. 40 °C/W Features G D S April 2013 |
Podobny numer części - FQA13N80-F109 |
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Podobny opis - FQA13N80-F109 |
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