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FQA13N80-F109 Arkusz danych(PDF) 1 Page - Fairchild Semiconductor

Numer części FQA13N80-F109
Szczegółowy opis  12.6 A, 800 V, RDS(on) = 750 m廓 (Max.) @ VGS = 10 VID = 6.8 A
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Producent  FAIRCHILD [Fairchild Semiconductor]
Strona internetowa  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FQA13N80-F109 Arkusz danych(HTML) 1 Page - Fairchild Semiconductor

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©2007 Fairchild Semiconductor Corporation
FQA13N80_F109 Rev.
C0
FQA13N80_F109
N-Channel
QFET® MOSFET
800 V, 12.6 A, 750 mΩ
• 12.6 A, 800 V, RDS(on) = 750 mΩ (Max.) @ VGS = 10 V
ID = 6.8 A
• Low
Gate Charge (Typ. 68 nC)
• Low Crss (
Typ. 30 pF)
• 100%
Avalanche Tested
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor®’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance and
high avalanche energy strength. These devices are suitable for
switched mode power supplies, active power factor correction
(PFC), and electronic lamp ballasts.
Absolute Maximum Ratings
Thermal Characteristics
D
G
S
TO-3PN
Symbol
Parameter
FQA13N80_F109
Unit
VDSS
Drain-Source Voltage
800
V
ID
Drain Current
- Continuous (TC = 25°C)
12.6
A
- Continuous (TC = 100°C)
8.0
A
IDM
Drain Current
- Pulsed
(Note 1)
50.4
A
VGSS
Gate-Source Voltage
± 30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
1100
mJ
IAR
Avalanche Current
(Note 1)
12.6
A
EAR
Repetitive Avalanche Energy
(Note 1)
30
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.0
V/ns
PD
Power Dissipation (TC = 25°C)
300
W
- Derate above 25°C
2.38
W/°C
TJ, TSTG
Operating and Storage Temperature Range
-55 to +150
°C
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C
Symbol
Parameter
FQA13N80_F109
Unit
RθJC
Thermal Resistance, Junction-to-Case
, Max.
0.42
°C/W
RθCS
Thermal Resistance, Case-to-Sink
, Typ.
0.24
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
, Max.
40
°C/W
Features
G
D
S
April 2013


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