Zakładka z wyszukiwarką danych komponentów
  Polish  ▼
ALLDATASHEET.PL

X  

FQPF5N50CFTU Arkusz danych(PDF) 2 Page - Fairchild Semiconductor

Numer części FQPF5N50CFTU
Szczegółowy opis  Low gate charge ( typical 18nC)
Download  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Producent  FAIRCHILD [Fairchild Semiconductor]
Strona internetowa  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FQPF5N50CFTU Arkusz danych(HTML) 2 Page - Fairchild Semiconductor

  FQPF5N50CFTU Datasheet HTML 1Page - Fairchild Semiconductor FQPF5N50CFTU Datasheet HTML 2Page - Fairchild Semiconductor FQPF5N50CFTU Datasheet HTML 3Page - Fairchild Semiconductor FQPF5N50CFTU Datasheet HTML 4Page - Fairchild Semiconductor FQPF5N50CFTU Datasheet HTML 5Page - Fairchild Semiconductor FQPF5N50CFTU Datasheet HTML 6Page - Fairchild Semiconductor FQPF5N50CFTU Datasheet HTML 7Page - Fairchild Semiconductor FQPF5N50CFTU Datasheet HTML 8Page - Fairchild Semiconductor  
Zoom Inzoom in Zoom Outzoom out
 2 / 8 page
background image
2
www.fairchildsemi.com
FQPF5N50CF Rev. B
Package Marking and Ordering Information
Electrical Characteristics T
C = 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 21.5 mH, IAS = 5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width
≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FQPF5N50CF
FQPF5N50CF
TO-220F
-
-
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
500
--
--
V
∆BV
DSS/
∆T
J
Breakdown Voltage Temperature Coef-
ficient
ID = 250 µA, Referenced to 25°C
--
0.5
--
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 500 V, VGS = 0 V
--
--
1
µA
VDS = 400 V, TC = 125°C
--
--
10
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
nA
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA2.0
--
4.0
V
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 2.5A
--
1.3
1.55
gFS
Forward Transconductance
VDS = 40 V, ID = 2.5A
(Note 4)
--
5.2
--
S
Dynamic Characteristics
Ciss
Input Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
480
625
pF
Coss
Output Capacitance
--
80
105
pF
Crss
Reverse Transfer Capacitance
--
15
20
pF
Switching Characteristics
td(on)
Turn-On Delay Time
VDD = 250 V, ID = 5A,
RG = 25 Ω
(Note 4, 5)
--
12
35
ns
tr
Turn-On Rise Time
--
46
100
ns
td(off)
Turn-Off Delay Time
--
50
110
ns
tf
Turn-Off Fall Time
--
48
105
ns
Qg
Total Gate Charge
VDS = 400 V, ID = 5A,
VGS = 10 V
(Note 4, 5)
--
18
24
nC
Qgs
Gate-Source Charge
--
2.2
--
nC
Qgd
Gate-Drain Charge
--
9.7
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
5
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
20
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 5 A
--
--
1.4
V
trr
Reverse Recovery Time
VGS = 0 V, IS = 5 A,
dIF / dt = 100 A/µs
(Note 4)
--
65
--
ns
Qrr
Reverse Recovery Charge
--
0.11
--
µC


Podobny numer części - FQPF5N50CFTU

ProducentNumer częściArkusz danychSzczegółowy opis
logo
Fairchild Semiconductor
FQPF5N50CF FAIRCHILD-FQPF5N50CF Datasheet
657Kb / 8P
   500V N-Channel MOSFET
More results

Podobny opis - FQPF5N50CFTU

ProducentNumer częściArkusz danychSzczegółowy opis
logo
Kersemi Electronic Co.,...
IRF840B KERSEMI-IRF840B Datasheet
1Mb / 9P
   Low gate charge ( typical 41 nC)
logo
Advanced Power Electron...
AP9T18GH A-POWER-AP9T18GH_14 Datasheet
218Kb / 6P
   Low Gate Charge
AP9T15GHJ-HF A-POWER-AP9T15GHJ-HF_14 Datasheet
103Kb / 4P
   Low Gate Charge
AP9T16GJ A-POWER-AP9T16GJ_14 Datasheet
268Kb / 6P
   Low Gate Charge
logo
JILIN SINO-MICROELECTRO...
JCS12N65FC JSMC-JCS12N65FC Datasheet
548Kb / 8P
   Low gate charge
logo
Kersemi Electronic Co.,...
KSMD540 KERSEMI-KSMD540 Datasheet
658Kb / 4P
   Low gate charge.
KSMD3303 KERSEMI-KSMD3303 Datasheet
620Kb / 4P
   Low gate charge.
KSMF5N60 KERSEMI-KSMF5N60 Datasheet
670Kb / 4P
   Low gate charge.
KSMF6N65 KERSEMI-KSMF6N65 Datasheet
707Kb / 4P
   Low gate charge.
logo
Advanced Power Electron...
AP4513GD A-POWER-AP4513GD_14 Datasheet
89Kb / 7P
   Low Gate Charge
More results


Html Pages

1 2 3 4 5 6 7 8


Arkusz danych Pobierz

Go To PDF Page


Link URL




Polityka prywatności
ALLDATASHEET.PL
Czy Alldatasheet okazała się pomocna?  [ DONATE ] 

O Alldatasheet   |   Reklama   |   Kontakt   |   Polityka prywatności   |   Linki   |   Lista producentów
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com