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ES1B-E3-5AT Arkusz danych(PDF) 1 Page - Vishay Siliconix |
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ES1B-E3-5AT Arkusz danych(HTML) 1 Page - Vishay Siliconix |
1 / 5 page ES1A thru ES1D www.vishay.com Vishay General Semiconductor Revision: 27-Feb-13 1 Document Number: 88586 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Surface Mount Ultrafast Plastic Rectifier TYPICAL APPLICATIONS For use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer, automotive and telecommunication. FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Ultrafast recovery times for high efficiency • Low forward voltage, low power losses • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 MECHANICAL DATA Case: DO-214AC (SMA) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified (“_X” denotes revision code e.g. A, B, .....) Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes cathode end PRIMARY CHARACTERISTICS IF(AV) 1.0 A VRRM 50 V to 200 V IFSM 30 A trr 15 ns VF 0.92 V TJ max. 150 °C DO-214AC (SMA) MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL ES1A ES1B ES1C ES1D UNIT Device marking code EA EB EC ED Maximum repetitive peak reverse voltage VRRM 50 100 150 200 V Maximum RMS voltage VRMS 35 70 105 140 V Maximum DC blocking voltage VDC 50 100 150 200 V Maximum average forward rectified current (fig. 1) IF(AV) 1.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 30 A Operating junction and storage temperature range TJ, TSTG - 55 to + 150 °C |
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